Abstract:Ultrafast thermomechanical responses of silicon thin films due to ultrashort-pulsed laser irradiation were investigated using an atomic-level hybrid method coupling the molecular dynamics and the ultrafast two-step energy transport model. The dynamic reflectivity and absorption were considered, and the effects of laser fluence and pulse duration on the thermomechanical response were studied. It was found that both the carrier temperature and number density rapidly increase to their maximum while the lattice temperature rises at a much slower rate. The ultrafast laser heating could induce a strong stress wave in the film, with the maximum compressive and tensile stress occurring near the front and back surfaces, respectively. For laser pulses of the same duration, the higher the laser fluence is, the higher the carrier temperature and density and lattice temperature are induced. For the same laser fluence, a longer pulse generally produces lower carrier density and temperatures and weaker stress shock strength. However, for the fluence of 0.2 J/cm(2), the lowest lattice temperature was simulated for a 100-fs pulse compared to the 1-ps and 5-ps pulses, due to the increase of reflectivity by high carrier density. It is also shown that the optical properties as functions of lattice temperature usually employed are not suited for modeling ultrafast laser interactions with silicon materials.

Infrared Laser Induced SF6 Interaction with Silicon and Tungstun Surfaces

Laser Induced Plasma in the Formation of Surface-Microstructured Silicon

Laser-Induced Reactions of Semiconductor Surfaces

Surface Morphology and Infrared Absorption of Silicon Irradiated by Picosecond Laser Pulses in Sf6

Laser microstructuring of Si surfaces for low-threshold field-electron emission

Combined Continuum-Atomistic Modeling of Ultrashort-Pulsed Laser Irradiation of Silicon

Broad band enhanced infrared light absorption of a femtosecond laser microstructured silicon

Interaction Mechanism of Femtosecond Laser and Wide Band-Gap Material

Evolution of Silicon Surface Microstructures by Picosecond and Femtosecond Laser Irradiations

Great enhancement of infrared light absorption of silicon surface-structured by femtosecond laser pulses in N2 ambient

Infrared Fluorescence from Laser Induced Sensitized Reaction of SF/sub 6/-Uf/sub 6/-H/sub 2/ System

Infrared Light Absorption of Silver Film Coated on the Surface of Femtosecond Laser Microstructured Silicon in Sf6

Interaction Between the Mid-Infrared Continuous Wave Laser with a Center Wavelength of 3.8 Μm and Fused Silica.

Surface Evolution and Laser Damage Resistance of CO2 Laser Irradiated Area of Fused Silica

Infrared Light Absorption and Emissivity of Silicon Microstructured by Femtosecond Laser in SF6

Molecular Dynamics Study of Interaction between Fluorine Atoms and Silicon Surface

Crystallinity and Sub-Band Gap Absorption of Femtosecond-Laser Hyperdoped Silicon Formed in Different N-Containing Gas Mixtures

Femtosecond laser fabrication of silicon surface microstructures for enhanced infrared radiation under electric drive

Laser-Induced Damage Threshold of Silicon under Combined Millisecond and Nanosecond Laser Irradiation

Irradiation Effects of CO2laser Parameters on Surface Morphology of Fused Silica

Theory Analysis of Wavelength Dependence of Laser-Induced Phase Explosion of Silicon