Defect Control in Ca1−δCeδAg1−δSb (δ ≈ 0.15) Through Nb Doping

Xin Li,Jun-Jie Yu,Yin-Tu Liu,Zhen Wu,Jia Guo,Tie-Jun Zhu,Xin-Bing Zhao,Xu-Tang Tao,Sheng-Qing Xia

DOI: https://doi.org/10.1039/c7qi00121e

IF: 7.779

2017-01-01

Inorganic Chemistry Frontiers

Abstract:By controlled Nb-doping the point-defect structure of the thermoelectric material Ca1−δREδAg1−δSb is modulated.

What problem does this paper attempt to address?

Defect Control In Ca1-Delta Ce Delta Ag1-Delta Sb(Delta Approximate To 0.15) Through Nb Doping

Xin Li,Jun-Jie Yu,Yin-Tu Liu,Zhen Wu,Jia Guo,Tie-Jun Zhu,Xin-Bing Zhao,Xu-Tang Tao,Sheng-Qing Xia

DOI: https://doi.org/10.1039/c7qi00121e

IF: 7.779

2017-01-01

Inorganic Chemistry Frontiers

Abstract:Zintl phases with the nominal compositions Ca1-delta RE delta Ag1-delta Sb (RE = La, Ce, Pr, Nd, Sm; delta approximate to 0.15) are interesting due to their unique crystal structures and potential as high temperature thermoelectrics. Their structures generally feature the LiGaGe type structure with substantial vacancies on the Ag sites. The formation of such defects can be explained by the electronic effects, with which 18 electrons are required to stabilize the CaAgSb Zintl system. Since the substitution of Ca2+ with RE3+ will lead to electron excess, the formation of Ag defects will be an intrinsic character of such compounds to maintain their electron precise nature. In this work, the material Ca0.85Ce0.15Ag0.85Sb was selected for a detailed study on defect chemistry. In order to better understand the mechanism related to the defect formation and control in this system, we conducted a series of experiments aimed at controlling the point defects in Ca0.85Ce0.15Ag0.85Sb. This strategy was realized by intentionally doping Nb, which resulted in the discovery of a series of low defect density materials Ca0.725+xNb0.1-xCe0.15AgSb (0 <= x <= 0.05). In this work, an interesting defect controlling strategy on Zintl phases was demonstrated, which suggested the high flexibility of Ca1-delta RE delta Ag1-delta Sb in the optimization of thermoelectric properties.
Defect Chemistry, Phase Transitions, and Thermoelectric Properties of Ca1–xCexAg1–ySb (0 ≤ X ≤ 1; 0 ≤ Y ≤ 1)

Xin Li,Min Zhu,Zhen Wu,Jia Guo,Xu-Tang Tao,Sheng-Qing Xia

DOI: https://doi.org/10.1021/acs.chemmater.7b00716

IF: 10.508

2017-01-01

Chemistry of Materials

Abstract:Zintl phases Ca1–xCexAg1–ySb (0 ≤ x ≤ 1; 0 ≤ y ≤ 1) have exhibited high-temperature thermoelectric potentials in previous studies. In this work, defect chemistry and thermoelectric properties related to the Ca1–xCexAg1–ySb series were carefully investigated. The results revealed that the Ce contents in Ca1–xCexAg1–ySb were very critical in governing the formation of various Ag-defect structures. With the Ce concentrations increased, several phase transition processes were observed, corresponding to closely related but obviously different [Ag1–ySb] anionic superlattices. Such a defect model makes these compounds very flexible in the optimization of thermoelectric properties. For a material with the nominal composition of Ca0.83Ce0.17Ag0.85Sb, a high figure of merit (ZT ∼ 0.6) can be maintained over a wide temperature range from 800 to 1025 K, which is a favorable characteristic for practical applications.
Defect Structure Regulation and Thermoelectric Transfer Performance in N-Type Bi2-xSbxTe3-ySey-based Compounds

Li Rui-Ying,Luo Ting-Ting,Li Mao,Chen Shuo,Yan Yong-Gao,Wu Jin-Song,Su Xian-Li,Zhang Qing-Jie,Tang Xin-Feng

DOI: https://doi.org/10.7498/aps.73.20240098

IF: 0.906

2024-01-01

Acta Physica Sinica

Abstract:Bi2Te3-based compounds are thermoelectric materials with the best performance near room temperature. The existence of a large number of complex defects makes defect engineering a core stratagem for adjusting and improving the thermoelectric performance. Therefore, understanding and effectively controlling the existence form and concentration of defects is crucial for achieving high-thermoelectric performance in Bi2Te3-based alloy. Herein, a series of Cl doped n-type quaternary Bi2-xSbxTe3-ySey compounds is synthesized by the zone-melting method. The correlation between defect evolution process and thermoelectric performance is systematically investigated by first-principles calculation and experiments. Alloying Sb on Bi site and Se on Te site induce charged structural defects, leading to a significant change in the carrier concentration. For Bi2-xSbxTe2.994Cl0.006 compounds, alloying Sb on Bi site reduces the formation energy of the antisite defect, which generates the antisite defect and accompanied with the increase of the minority carrier concentration from 2.09x10(16) to 3.99x10(17) cm(-3). The increase of the minority carrier severely deteriorates the electrical transport properties. In contrast, alloying Se in the Bi1.8Sb0.2Te2.994-ySeyCl0.006 compound significantly lowers the formation energy of the complex defect +, which becomes more energetically favorable and suppresses the formation of the antisite defect. As a result, the concentration of minority carriers decreases to 1.46x10(16) cm(-3). This eliminates the deterioration effect of the minority carrier on the electrical transport properties of the material and greatly improves the power factor. A maximum power factor of 4.49 mW/(m center dot K-2) is achieved for Bi1.8Sb0.2Te2.944Se0.05Cl0.006 compound at room temperature. By reducing thermal conductivity through intensifying the phonon scattering via alloying Sb and Se, the maximum ZT value of 0.98 is attained for Bi1.8Sb0.2Te2.844Se0.15Cl0.006 compound at room temperature. Our finding provides an important guidance for adjusting point defects, carrier concentrations, and thermoelectric performances in Bi2Te3-based compounds with complex compositions.
Research of Defect Structure Regulation and Thermoelectric Performance in n-Type Bi 2-x Sb x Te 3-y Se y -Based Compounds

Rui-Ying Li,Ting-Ting Luo,Mao Li,Shuo Chen,Yong-Gao Yan,Jin-Song Wu,Xian-Li Su,Qing-Jie Zhang,Xin-Feng Tang,Li Rui-ying,Luo Ting-Ting,Li mao,Chen Shuo,Yan Yong-gao,Wu Jin-Song,Su Xian-Li,Zhang Qing-Jie,Tang Xin-Feng,,,

DOI: https://doi.org/10.7498/aps.73.20240098

IF: 0.906

2024-01-01

Acta Physica Sinica

Abstract:Bi 2 Te 3 -based compounds are the best performing thermoelectric materials near room temperature. The presence of numerous complex defects renders defect engineering as the core stratagem for modulating and improving the thermoelectric performance.Therefor rationally understanding and effectively controlling the existence form and concentration of defects are crucial for achieving high-thermoelectric performance in Bi 2 Te 3 -based alloys.Herein, a series of Cl doped n-type quaternary Bi 2-x Sb x Te 3-y Se y compounds were synthesized by zone-melting method. The correlation between defect evolution process and thermoelectric performance were systematically investigated by first-principles calculation and experiments.Alloying Sb on Bi site and Se on Te site induce charged structural defects, leading to a significant change in the carrier concentration.For Bi 2-x Sb x Te 2.994 Cl 0.006 compounds, alloying Sb on Bi site decreases the formation energy of the S b Te 2 antisite defect,which generates the antisite defect SbTe 2 and accompanies with the increase of the minority carrier concentration from 2.09×10 16 cm -3 to 3.99×10 17 cm -3 .The increase of the minority carrier severely deteriorates the electrical transport properties. In contrast, alloying Se in the Bi 1.8 Sb 0.2 Te 2.994-y Se y Cl 0.006 compounds significantly lowers the formation energy of the complex defect S e Te + S b Bi ,which becomes more energetically favorable and suppresses the formation of the antisite defect SbTe 2. As a result,the concentration of minority carriers decreases to 1.46×10 16 cm -3 .This eliminates the deterioration effect of the minority carrier on the electrical transport properties of the material and greatly boosts the power factor.A maximum power factor of 4.49 mW m-1 K-2 is achieved for Bi 1.8 Sb 0.2 Te 2.944 Se 0.05 Cl 0.006 compound at room temperature.In conjunction with the reduced thermal conductivity by intensified phonon scattering via alloying Sb and Se, the maximum ZT value of 0.98 is attained for Bi 1.8 Sb 0.2 Te 2.844 Se 0.15 Cl 0.006 compound at room temperature.Our finding provides an important guidance for modulating point defects, carrier concentration, and thermoelectric performance in Bi 2 Te 3 -based compounds with complex compositions.

physics, multidisciplinary
Tuning the Thermoelectric Properties of Ca9zn4+Xsb9 by Controlled Doping on the Interstitial Structure

Zhen Wu,Jun Li,Xin Li,Min Zhu,Ke-chen Wu,Xu-tang Tao,Bai-Biao Huang,Sheng-qing Xia

DOI: https://doi.org/10.1021/acs.chemmater.6b02498

IF: 10.508

2016-01-01

Chemistry of Materials

Abstract:The complex Zintl phase Ca9Zn4.5Sb9 is a promising thermoelectric material due to its low thermal conductivity. Initial studies revealed that undoped Ca9Zn4.5Sb9 has a maximum zT value of 0.37 at 823 K. Hall effect measurements on Ca9Zn4.5-xAl2x/3Sb9 (x = 0, 0.5, 1), which nominally feature identical carrier concentration, suggested that control of the interstitial chemistry is critical in affecting the mobility of this system. Removal of the interstitial atoms results in rapid decrease in the carrier mobility, which has negative effects on the overall thermoelectric performance. Further material optimization was successfully carried out via Cu-doping in Ca9Zn4.5Sb9, with the aid of theoretical predictions. This resulted in high concentration of interstitial atoms as in Ca9Zn4.5-xCuxSb9 (x = 0.05, 0.1, 0.15, 0.2). For the optimized composition Ca9Zn4.35Cu0.15Sb9, a maximum of the figure of merit (zT = 0.72) was obtained at 873 K, which is increased by more than twice compared to the undoped material Ca9Zn4.5Sb9.
Point defect approach to enhance the thermoelectric performance of Zintl-phase BaAgSb

Yifang Huang,Chen Chen,Weiming Zhang,Xiaofang Li,Wenhua Xue,Xinyu Wang,Yijie Liu,Honghao Yao,Zongwei Zhang,Yue Chen,Feng Cao,Xingjun Liu,Yumei Wang,Qian Zhang

DOI: https://doi.org/10.1007/s40843-020-1640-2

2021-05-14

Science China Materials

Abstract:Zintl-phase compounds have great potential in thermoelectric applications owing to their "phonon glass-electron crystal" (PGEC) structures. In this paper, a new Zintl-phase thermoelectric material BaAgSb is reported. Ba deficiency increased the carrier concentration, and then suppressed the intrinsic excitation. The peak ZT value of Ba0.98AgSb reached ∼0.56 at 773 K. Moreover, Eu alloying at Ba site not only lowered the lattice thermal conductivity by inducing point-defect scattering, but also improved the electrical properties by increasing the carrier mobility. Finally, a peak ZT of ∼0.73 was achieved in Ba0.78Eu0.2AgSb.

materials science, multidisciplinary
Anomalies induced by calcium doping in NdCeCuO system

X.H. Chen,T.F. Li,R.P. Wang,Y.M. Qiu,K.Q. Ruan,L.Z. Cao,L. Shi,Y.B. Jia,G.E. Zhou,Y.H. Zhang

DOI: https://doi.org/10.1016/S0921-4534(97)00811-3

1997-01-01

Abstract:Ca doping into either the superconducting samples Nd1.85-xCe0.15CaxCuOy or the nonsuperconducting samples Nd2-xCaxCuOy, leads to a sharp peak at about 200 K in their S(T) curves, and some structural anomaly is observed by variable-temperature x-ray diffraction al the corresponding temperature.
Regulating Multiscale Defects to Enhance the Thermoelectric Performance of Ca 0.87 Ag 0.1 Dy 0.03 MnO 3 Ceramics

Zongmo Shi,Sijie Tong,Jian Wei,Yupeng Guo,Ying Zhang,Linxiang Wang,Junzhan Zhang

DOI: https://doi.org/10.1021/acsami.2c09154

2022-07-10

Abstract:Achieving high thermoelectric properties of CaMnO(3) ceramics is significant for its applications at high temperature. Herein, Ca(0.87)Ag(0.1)Dy(0.03)MnO(3) ceramics with plate-like template seeds additives were prepared by using a solid-state reaction method. The multiscale defects, including grain boundaries, oxygen defects, and Ag nanoprecipitations, which were regulated by the different sintering atmospheres, were beneficial for electron transport and phonon scattering. The grain boundaries...

materials science, multidisciplinary,nanoscience & nanotechnology
Sr/Eu Cation Doping and Thermoelectric Properties of the Compound Ca9Zn4.5−δSb9 (0<Δ<0.5)

Jian Zhang,Zhen Wu,Shengqing Xia

DOI: https://doi.org/10.1360/n972018-01178

2019-01-01

Chinese Science Bulletin (Chinese Version)

Abstract:Previous studies suggested that Zintl phases related to the Ca9Zn4.5− δ Sb9 (0 δ x Cu x Sb9 indicated that they could achieve an optimized zT around 0.7. Especially for Ca9Zn4.5− δ Sb9, a very recent report suggested that a high zT of 1.1 at 875 K could be obtained in combination of various secondary phases introduced by the variation of Zn contents, which provided a chemical potential to change the composition. However, to change the composition of Ca9Zn4.5− δ Sb9 is actually very difficult to implement owing to the narrow homogeneity range. In this work, with Ca substituted by big cations such as Eu2+ and Sr2+, the unit cell of Ca9Zn4.5− δ Sb9 was expanded, and similar significant enhancement on the thermoelectric performance was resulted. All syntheses were handled inside a glovebox, then the reactants were loaded in the Nb tube and arc-welded, which were enclosed in a fused silica tube. The reactions were firstly heated to 1173 K in 6 h and then maintained at this temperature for 24 h. After the homogeneity process, the furnace was slowly cooled down to 873 K at a rate of 6 K/h, followed by another dwelling for 6 hours and finally cooled down to 573 K at a rate of 10 K/h. At last, the furnace was shut down and the reactions were opened in the glovebox. The compound were fully characterized by single-crystal X-ray diffraction (SXRD) and powder X-ray diffraction(PXRD), Energy dispersive spectrometer (EDS) and Hall effect measurement, etc. Single-crystal X-ray diffraction (SXRD) proves that with the increase of Sr component, the crystal parameters are slightly increasing. Hall effect measurement show that the substitution of Ca by Eu or Sr can both lead to an obvious decreasing on the carrier (holes) concentration, and the resultant mobility for Sr/Eu-doped materials is very similar if compared by the same doping level. It is also noted that neither the carrier concentration nor the mobility seems to vary linearly with the Eu/Sr-doping contents, which means a saturated state will be eventually approached. This phenomenon is consistent with the speculation above that the changes on the properties should predominantly originate from the change of interstitial Zn content, which the size effect dominated. While the decreasing carrier concentrations as well as the increasing mobility and lattice thermal conductivity all point to a structure modification, the crystal structures of these doped materials were systematically verified through the single crystal X-ray diffraction. In conclusion, although a direct measurement on such a small composition variation is very difficult (the X-ray diffraction results prove it), the significantly reduced carrier concentration and increased mobility as well as lattice thermal conductivity can still provide some useful hints on understanding the property optimization of these materials. For material Ca8.2Eu0.8Zn4.5− δ Sb9, high figure of merit with ZT ~0.81 has been achieved at 873 K.
On the Role of Defects in the Electronic Structure of MnBi$_{2-x}$Sb$_x$Te$_4$

Daniel Nevola,Kevin F. Garrity,Nader Zaki,Jiaqiang Yan,Hu Miao,Sugata Chowdhury,Peter D. Johnson

DOI: https://doi.org/10.48550/arXiv.2206.14325

2022-06-28

Materials Science

Abstract:Elemental substitution is a proven method of Fermi level tuning in topological insulators, which is needed for device applications. Through static and time resolved photoemission, we show that in MnBi$_2$Te$_4$, elemental substitution of Bi with Sb indeed tunes the Fermi level towards the bulk band gap, making the material charge neutral at 35\% Sb concentration. For the first time, we are able to directly probe the excited state band structure at this doping level, and their dynamics, which show that the decay channels at the Fermi level are severely restricted. However, elemental substitution widens the surface state gap, which we attribute to the increase in antisite defects resulting from Sb substitution. This hypothesis is supported by DFT calculations that include defects, which show a sensitivity of the topological surface state to their inclusion. Our results emphasize the need for defect control if MnBi$_{2-x}$Sb$_x$Te$_4$ is to be used for device applications.
Influence of defect distribution on the thermoelectric properties of FeNbSb based materials

Shuping Guo,Kaishuai Yang,Zhi Zeng,Yongsheng Zhang

DOI: https://doi.org/10.1039/c8cp02071j

2018-05-30

Abstract:Doping and alloying are important methodologies to improve the thermoelectric performance of FeNbSb based materials. To fully understand the influence of point defects on the thermoelectric properties, we have used density functional calculations in combination with the cluster expansion and Monte Carlo methods to examine the defect distribution behaviors in the mesoscopic FeNb1-xVxSb and FeNb1-xTixSb systems. We find that V and Ti exhibit different distribution behaviors in FeNbSb at low temperature: forming the FeNbSb-FeVSb phase separations in the FeNb1-xVxSb system but two thermodynamically stable phases in FeNb1-xTixSb. Based on the calculated effective mass and band degeneracy, it seems the doping concentration of V or Ti in FeNbSb has little effect on the electrical properties, except for one of the theoretically predicted stable Ti phases (Fe6Nb5Ti1Sb6). Thus, an essential methodology to improve the thermoelectric performance of FeNbSb should rely on phonon scattering to decrease the thermal conductivity. According to the theoretically determined phase diagrams of Fe(Nb,V)Sb and Fe(Nb,Ti)Sb, we propose the (composition, temperature) conditions for the experimental synthesis to improve the thermoelectric performance of FeNbSb based materials: lowering the experimental preparation temperature to around the phase boundary to form a mixture of the solid solution and phase separation. The point defects in the solid solution effectively scatter the short-wavelength phonons and the (coherent or incoherent) interfaces introduced by the phase separation can additionally scatter the middle-wavelength phonons to further decrease the thermal conductivity. Moreover, the induced interfaces could enhance the Seebeck coefficient as well, through the energy filtering effect. Our results give insight into the understanding of the impact of the defect distribution on the thermoelectric performance of materials and strengthen the connection between theoretical predictions and experimental measurements.
Enhancing thermoelectric performance of Sb2Te3 through swapped bilayer defects

Jiangjing Wang,Chongjian Zhou,Yuan Yu,Yuxing Zhou,Lu Lu,Bangzhi Ge,Yudong Cheng,Chun-Lin Jia,Riccardo Mazzarello,Zhongqi Shi,Matthias Wuttig,Wei Zhang

DOI: https://doi.org/10.1016/j.nanoen.2020.105484

IF: 17.6

2021-01-01

Nano Energy

Abstract:Lattice defects are typically used to tailor the thermoelectric properties of materials. It is desirable that such defects improve the electrical conductivity, while, at the same time, reduce the thermal conductivity, for an overall improvement on the thermoelectric properties of materials. Here, we report on an extended defect in Sb2Te3 consisting of swapped bilayers with chemical intermixing of Sb and Te atoms, which can be generated and effectively manipulated in polycrystalline samples through synthetic methods and thermal treatments. The swapped bilayers bridge the spatial gaps between the Sb2Te3 quintuple-layer blocks, enhancing the charge carrier mobility and thus the electrical conductivity. These defects also result in a reduced lattice thermal conductivity through suppressing phonon transport. These synergistic effects contribute together to an improved thermoelectric quality factor and an enhanced figure of merit (zT) value in Sb2Te3.

materials science, multidisciplinary,chemistry, physical,physics, applied,nanoscience & nanotechnology
Defects Engineered Ferroelectricity and Electrocaloric Effect in Pb0.7Ba0.3ZrO3 Ceramics

Mengjiao Yu,Feng Li,Lifan Wang,Mingsheng Long,Weiping Gong,Lei Shan,Chunchang Wang

DOI: https://doi.org/10.1016/j.ceramint.2023.12.017

IF: 5.532

2024-01-01

Ceramics International

Abstract:Point defects play a versatile role in modulating ferroelectricity and piezoelectricity, however, the decisive role of point-defect concentration/species in controlling macroscopic performance remains unknown. In this work, defects are implanted by reduced atmosphere annealing and/or Mn doping in Pb0.7Ba0.3ZrO3 ceramics. i) defects induce lattice distortion, internal lattice strain and accordingly, phase structure is changed (Williamson-Hall analysis and Rietveld refinement); ii) ferroelectricity is enhanced for 0 MN and 1 MA sample with contribution of defect polarization (first-order reversal curves). iii) Joule heat is depressed as an enhanced resistivity by carrier annihilation/forming defect complex; iv) ECE behaves distinctly among 0 MN, 1 MA and 1 MH, respectively. 0 MN sample exhibits a ATmax of 0.39 K and 1 MA possesses a ATmax of 0.34 K. Interestingly, a broad temperature span with a low instability of -20 % within 288 K-423 K is obtained in 1 MH sample. This work not only provides a guideline for defects enhancing ferroelectricity and ECE, but also clarifies the reduction-resistant properties of (Pb, Ba)ZrO3 system that are suitable for constructing base-metal multilayer ceramic capacitors in solid-state cooling devices.
Defect Modulation on CaZn1-xAg1-ySb (0 < X < 1; 0 < Y < 1) Zintl Phases and Enhanced Thermoelectric Properties with High Zt Plateaus

Min Zhu,Zhen Wu,Qian Liu,Tie-Jun Zhu,Xin-Bing Zhao,BaiBiao Huang,Xutang Tao,Sheng-Qing Xia

DOI: https://doi.org/10.1039/c8ta04001j

IF: 11.9

2018-01-01

Journal of Materials Chemistry A

Abstract:Thermoelectric materials with high average figure of merit (zT) over the applied temperature range are crucial for power generation applications. In this report, a new Zintl series, CaZn1-xAg1-ySb (0 < x < 1; 0 < y < 1), was discovered and carefully investigated for their thermoelectric potential. These phases feature unique anionic layers with extensive Zn/Ag defects. Such a characteristic ensures very low intrinsic thermal conductivity and meanwhile considerably high electrical conductivity for the corresponding materials. For an optimized composition CaZn0.4Ag0.18Sb, decent thermoelectric performance was proved with a broad high zT plateau (zT approximate to 1.0) observed from 800 to 1100 K. The discovery of this new Zintl series not only provides us a valuable resource for exploring high zT materials, but also sheds some new light on the design of such thermoelectrics on the basis of defect modulation.
Electromagnetic, atomic-structure and chemistry changes induced by Ca-doping of low-angle $YBa_2Cu_3O_{7-δ}$ grain boundaries

Xueyan Song,George Daniels,D. Matt Feldmann,Alex Gurevich,David Larbalestier

DOI: https://doi.org/10.48550/arXiv.cond-mat/0505568

2005-05-23

Materials Science

Abstract:Practical high temperature superconductors must be textured to minimize the reduction of the critical current density $J_{gb}$ at misoriented grain boundaries. Partial substitution of Ca for Y in $YBa_2Cu_3O_{7-\delta}$ has shown significant improvement in $J_{gb}$ but the mechanisms are still not well understood. Here we report atomic-scale, structural and analytical electron microscopy combined with transport measurements on $7^{\circ}$ $[001]$-tilt $Y_{0.7}Ca_{0.3}Ba_2Cu_3O_{7-\delta}$ and $YBa_2Cu_3O_{7-\delta}$ grain boundaries, where the dislocation cores are well separated. We show that the enhanced carrier density, higher $J_{gb}$ and weaker superconductivity depression at the Ca-doped boundary result from a strong, non-monotonic Ca segregation and structural rearrangements on a scale of ~1 nm near the dislocation cores. We propose a model of the formation of $Ca^{2+}$ solute atmospheres in the strain and electric fields of the grain boundary and show that Ca doping expands the dislocation cores yet enhances $J_{gb}$ by improving the screening and local hole concentration.
Band convergence and phonon engineering to optimize the thermoelectric performance of CaCd 2 Sb 2

Zongwei Zhang,Honghao Yao,Xue Jia,Xinyu Wang,Xiaofang Li,Chen Chen,Xi Lin,Jiehe Sui,Xingjun Liu,Jun Mao,Guoqiang Xie,Qian Zhang

DOI: https://doi.org/10.1063/5.0076087

IF: 4

2022-01-24

Applied Physics Letters

Abstract:Alignment of valence bands has been demonstrated to be effective in promoting the thermoelectric performance of p-type AB2X2 zintl phases. In this work, the degeneracy of the valence bands is manipulated by alloying CaCd2Sb2 with CaMg2Sb2. It is found that the Γ(pxy) band and the Γ(pz) band were effectively converged in CaCd1.5Mg0.5Sb2. By further doping Ag at the Cd site, the carrier concentration can be maintained when the alloying concentration varies. The room-temperature Seebeck coefficient increased from ∼150 μV K−1 in CaCd2Sb2 to ∼190 μV K−1 in CaCd1.5Mg0.5Sb2 when the carrier concentration was maintained at ∼2.5 × 1019 cm−3. In addition, Cd/Mg substitutional point defects with substantial atomic mass difference induced significant phonon scattering; thus, a lattice thermal conductivity as low as ∼0.5 W m−1 K−1 was achieved at 750 K. Eventually, a peak zT value of ∼1.3 was realized in CaCd1.494Ag0.006Mg0.5Sb2.

physics, applied
Multiple Roles of Unconventional Heteroatom Dopants in Chalcogenide Thermoelectrics: The Influence of Nb on Transport and Defects in Bi2Te3

Xin Guo,Cunyin Zhang,Zhongyuan Liu,Pan He,Robert Szczęsny,Fangjun Jin,Wanqiang Liu,Duncan H Gregory

DOI: https://doi.org/10.1021/acsami.1c00355

2021-03-24

Abstract:Improvements in the thermoelectric performance of n-type Bi2Te3 materials to more closely match their p-type counterparts are critical to promote the continued development of bismuth telluride thermoelectric devices. Here the unconventional heteroatom dopant, niobium, has been employed as a donor in Bi2Te3. Nb substitutes for Bi in the rhombohedral Bi2Te3 structure and exhibits multiple roles in its modulation of electrical transport and defect-induced phonon scattering. The carrier concentration is significantly increased as electrons are afforded by aliovalent doping and formation of vacancies on the Te sites. In addition, incorporation of Nb in the pseudoternary Bi2-xNbxTe3-δ system increases the effective mass, m*, which is consistent with cases of "conventional" elemental doping in Bi2Te3. Lastly, inclusion of Nb induces both point and extended defects (tellurium vacancies and dislocations, respectively), enhancing phonon scattering and reducing the thermal conductivity. As a result, an optimum zT of 0.94 was achieved in n-type Bi0.92Nb0.08Te3 at 505 K, which is dramatically higher than an equivalent undoped Bi2Te3 sample. This study suggests not only that is Nb an exciting and novel electron dopant for the Bi2Te3 system but also that unconventional dopants might be utilized with similar effects in other chalcogenide thermoelectrics.
The atomic configuration and metallic state of extrinsic defects in Nb-doped BiFeO 3 thin films

Lei Liao,Qing Yang,Chen Cai,Yong Zhou,Huacong Sun,Xudan Huang,Pan Chen,Jianlin Wang,Xiaomei Li,Xuezeng Tian,Sheng Meng,Xuedong Bai,Lifen Wang

DOI: https://doi.org/10.1016/j.actamat.2024.119986

IF: 9.4

2024-05-09

Acta Materialia

Abstract:Defects in ferroelectric materials can cause microscopic strain and electron doping, which opens up new possibilities for unique physical properties in nanoelectronics. However, comprehending the relationship between these deep-buried defect configurations and the resulting physical properties is a long-term challenge. Here, utilizing the integrated differential phase imaging technique equipped in scanning transmission electron microscopy combined with energy dispersive X-ray spectroscopy, we show the full element-resolved atomic configuration of characteristic extrinsic defects in Nb-doped epitaxial BiFeO 3 thin films. Atomic-resolution characterization reveals that the Nb doping substitutes Fe at the center of an oxygen octahedron and creates Fe vacancies near the defect core, leading to the formation of one perovskite cell-wide BiNbO 3 chain that is expanded by 19% in perovskite cell volume and rotated by 45° relative to the matrix lattice. Further quantitative analysis of the defect demonstrates that the ferroelectric polarization distribution around the dopant-induced defects displays a "head-to-head" configuration, indicating the accumulation of negative charges. Supported by electron energy loss spectroscopy and density functional theory calculations, the linear defect leads to one-dimensional metallic channels embedded within the ferroelectric BiFeO 3 matrix. These atomic-scale findings establish the structure-functionality relationship of extrinsic defect in Nb-doped BiFeO 3 thin films, providing new insight into their fundamental understanding and potential use in low-dimensional nanoelectronics devices.

materials science, multidisciplinary,metallurgy & metallurgical engineering
Theoretical Study of Defects in Cu$_3$SbSe$_4$: Search for Optimum Dopants for Enhancing Thermoelectric Properties

Dat T. Do,S. D. Manhanti,S.D. Manhanti

DOI: https://doi.org/10.48550/arXiv.1409.4496

2014-09-16

Materials Science

Abstract:Cu$_3$SbSe$_4$ is a promising thermoelectric material due to high thermopower ($>400\ \mu$V/K) at 300K and higher. Although it has a simple crystal structure derived from zinc blende structure, previous work has shown that the physics of band gap formation is quite subtle due to the importance of active lone pair (5$s^2$) of Sb and the non-local exchange interaction between these and Se 5$p$ electrons. Since for any application of semiconductors understanding the properties of defects is essential, we discuss the results of a systematic study of several point defects in Cu$_3$SbSe$_4$ including vacancies and substitutions for each of the components. First principles calculations using density functional theory show that among variety of possible dopants, $p$-type doping can be done by substituting Sb with group $IV$ elements including Sn, Ge, Pb and Ti and $n$-type doping can be done by replacing Cu by Mg, Zn. Doping at the Se site appears to be rather difficult. Electronic structure calculations also suggest that the $p$-type behavior seen in nominally pure Cu$_3$SbSe$_4$ is most likely due to Cu vacancy rather than Se vacancy.
Regulating thermoelectric properties of Eu0.5Ca0.5Zn2Sb2 through Mg dopant

Wenkai Le,Wenwen Sheng,Runtao Liu,Minhui Yuan,Wenwei Yang,Jingyi Lv,Li Yin,Chen Chen,Xinyu Wang,Zongwei Zhang,Kejia Liu,Tianchi Wang,Qian Zhang,Jing Shuai

DOI: https://doi.org/10.1016/j.mtener.2022.101071

IF: 9.257

2022-08-01

Materials Today Energy

Abstract:CaAl2Si2 structure Zintl compounds are promising thermoelectric materials and have been extensively studied recently. In this study, Eu0.5Ca0.5Zn2-xMgxSb2 (0 ≤ x ≤ 0.3) compounds have been prepared by ball milling and spark plasma sintering. Results show that for Eu0.5Ca0.5Zn2Sb2, ZT has been improved about 20% compared with previously reported thermoelectric properties through the ball milling and hot-pressing preparation process. Moreover, the thermoelectric performance of Eu0.5Ca0.5Zn2Sb2 can be further increased through Mg substitution. Mg replacing Zn has a strong impact on phonon scattering, resulting in low thermal conductivity. A highest ZT about 1.05 is obtained in the Eu0.5Ca0.5Zn1.8Mg0.2Sb2 sample at 773 K. The obtained high thermoelectric performance in our work is comparable with other p-type Zintl thermoelectric materials, and this work provides a reference for the improvement of properties of other CaAl2Si2 structure Zintl thermoelectric materials.

materials science, multidisciplinary,chemistry, physical,energy & fuels

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