Dynamic strain control of the metal–insulator transition and non-volatile resistance switching in (0 1 0) VO2/(1 1 1) Pb(Mg1/3Nb2/3)0.7Ti0.3O3 epitaxial heterostructures

Bin Hong,Yuanjun Yang,Kai Hu,Mengmeng Yang,Zhenlin Luo,Xiaoguang Li,Chen Gao
DOI: https://doi.org/10.1016/j.matlet.2017.03.014
IF: 3
2017-01-01
Materials Letters
Abstract:•The (010)-VO2 film is epitaxially grown on functional ferroelectric substrate.•Metal-insulator transition temperature is reduced about 2.8K by electric fields.•Electric-field-induced non-volatile resistance states can encode information.
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