Strain Engineering On The Metal-Insulator Transition Of Vo2/Tio2 Epitaxial Films Dependent On The Strain State Of Vanadium Dimers

Bin Hong,Yuanjun Yang,Kai Hu,Yongqi Dong,Jingtian Zhou,Yue Zhang,Weisheng Zhao,Zhenlin Luo,Chen Gao

DOI: https://doi.org/10.1063/1.5121876

IF: 4

2019-01-01

Applied Physics Letters

Abstract:In this letter, a series of vanadium dioxide (VO2) epitaxial films were deliberately deposited on TiO2 substrates with different orientations [(001), (110), and (101)], in an attempt to gain insights into the strained VO2 epitaxial film. We found in-plane [100] and [1-10] directions, obviously anisotropic metal-insulator transition (MIT) in (110)-oriented VO2 films. In combination with synchrotron radiation high-resolution x-ray diffraction characterizations, electronic transport data reveal that the critical temperature of MIT depends on the strain state of the dimeric vanadium atomic chain along the c axis of the rutile phase. The anisotropy of MIT is closely related to the orientation of the VO2 films, which is caused by the varied orientation configuration of V-V atomic chain dimerization in the films. Soft x-ray absorption spectroscopy results further indicate that this anisotropy may be driven by the directional hybridization of O 2p and V 3d orbitals with respect to the orientation of VO2 thin films. The polarization-dependent V L-edge and O K-edge XAS data suggest that the elongation of the apical V-O bond length increases the p-d orbital overlap; thus, the energy level of the d(//) orbital is raised relative to that of the pi* orbital. These anisotropic MIT behaviors will help us to understand how the strain engineering depends on the strain state of vanadium dimers in VO2 films.