Abstract:Emerging silicon carbide (SiC) MOSFET power devices promise to displace silicon IGBTs from the majority of challenging power electronics applications by enabling superior efficiency and power density, as well as capability to operate at higher temperatures. This paper reports on the recent progress in development of 1200V SiC power MOSFETs. Two different chip sizes were fabricated and tested: 15A $({\bf 0.225}{\bf cm}\times {\bf 0.45cm})$ and 30A $({\bf 0.45}{\bf cm}\times {\bf 0.45cm})$ devices. First, the 30A MOSFETs were packaged as discrete components and static and switching measurements were performed. The device blocking voltage was 1200V and typical on-resistance was less than ${\bf 50}\ {\bf m}{\bf\Omega}$ with gate-source voltages of 0V and 20V, respectively. The total switching losses were 0.6 mJ, over five times lower than the competing devices. Next, a buck converter was built for evaluating longterm stability of the MOSFETs and typical switching waveforms are presented. Finally, the 15A MOSFETs were used for fabrication of 150A all-SiC modules. The module on-resistance values were in the range of ${\bf 10}\ {\bf m}{\bf\Omega}$, resulting in the best-in-class on-state voltage values of 1.5V at nominal current. The module switching losses were 2.3 mJ during turn-on and 1 mJ during turn-off, also significantly better than competing designs. The results validate performance advantages of the SiC MOSFETs, moving them a step closer to power electronics applications.

Experimental Demonstration of −730V Vertical SiC P-Mosfet with High Short Circuit Withstand Capability for Complementary Inverter Applications

Impact of SiC MOSFET on PV Inverter

Design and Experimental Demonstration of 4H-SiC Lateral High-Voltage MOSFETs With Double-RESURFs Technology for Power ICs

Fabrication and Dynamic Switching Characteristics of 6.5kv400a SiC MOSFET Module

Electrical Characterization and Analysis of 4H-Sic Lateral MOSFET (LMOS) for High-Voltage Power Integrated Circuits

Design Analysis of 4H-SiC MOSFET for High Power Application

A comprehensive analysis of breakdown mechanisms in 4H-SiC MOSFET and JFET

4H-Sic Super-Junction JFET: Design and Experimental Demonstration

Novel Designed SiC Devices for High Power and High Efficiency Systems

A New 4H-SiC Trench MOSFET With Improved Reverse Conduction, Breakdown, and Switching Characteristics

4.87 kV SiC MOSFET Using HfSiOx/SiO2 Gate Dielectrics Combined with PN Pillars

Design and Application of High-Voltage SiC JFET and Its Power Modules

Numerical demonstration of SiC trench MOSFET with integrated heterojunction diode for enhanced performance

A Two-Dimensional Computer-Aided Design Study of Unclamped Inductive Switching in an Improved 4H-SiC VDMOSFET

Fabrication and testing of 3500V/15A SiC JFET based power module for high-voltage, high-frequency applications

High-Performance 700 V SiC MOSFETs for the Industrial Market

Recent advances in silicon carbide MOSFET power devices

Implementation of a short channel (0.3 μm) for 4H-SiC MOSFETs with deep P-well using ‘channeling’ implantation

1.3 kV Vertical GaN-Based Trench MOSFETs on 4-Inch Free Standing GaN Wafer

Design and Experimental Demonstration of 1.35 Kv SiC Super Junction Schottky Diode

High-voltage full-SiC power module: Device fabrication, testing and high frequency application in kW-level converter