Preparation and Dielectric Properties of Ba0.5 Sr0.5 TiO3 Thin Films and Ba0. 1sr0. 9 TiO3 / YBa2Cu3 O7-δ Heterostructure Films

朱小红,彭炜,胡文斐,陈莺飞,朱建国,郑东宁,李林

DOI: https://doi.org/10.3321/j.issn:1001-9731.2003.02.023

2003-01-01

Abstract:Ferroelectric barium strontium titanate thin films possess excellent ferroelectric/ dielectric properties, and show very good application in passive microwave devices and dynamic random access memory. In addition, the microwave loss can be evidently decreased, and the various performances of the devices can be greatly optimized with YBCO high temperature superconducting thin films as bottom electrodes. In this pap.er, the parameters of regular substrates were compared according to application requirement of the microwave devices. Some techniques were described in order to obtain good properties of the Ba0.5 Sr0.5 TiO3 thin films and BSTO/YBCO heterostructures. The characterization of dielectric properties of thin films was also introduced in brief. Structurally perfect and high-quality Ba0.5Sr0.5TiO3 thin films were prepared successfully by PLD. What's more, Ba0. 1 Sr0.9 TiO3 / YBa2 Cu3O7 -δ bilayer het-erostructure was successfully developed on the 1. 2o vicinal LaAlOS substrate. The dielectric constant and loss tangent were 1200 and 0. 0045 respectively at 1MHz, and 77K. A tunability of 60% has been achieved under 30V DC bias, demonstrating their usefulness for frequency-agile microwave devices at the liquid nitrogen temperature.