Abstract:We have previously developed silicon-based light-emitting devices (LEDs) with luminescent erbium (Er)-doped TiO2 (TiO2:Er) films [Yang et al., Appl. Phys. Lett. 100, 031103 (2012)]. In an LED therein, the TiO2:Er film is sandwiched between the ITO film and heavily boron-doped p-type silicon (p+-Si). In this work, we have investigated the electroluminescence (EL) from two LEDs with the TiO2:Er films annealed at 650 and 850 °C, respectively. It is revealed that between the TiO2:Er film and p+-Si, there is an intermediate silicon oxide (SiOx, x ≤ 2) layer and its thickness increases from ∼4 to 8 nm with the increase of annealing temperature from 650 to 850 °C. Interestingly, the thickness of the intermediate SiOx layer is found to exhibit a profound impact on the EL from the LED with the TiO2:Er film on p+-Si. The EL from the LED with the 650 °C-annealed TiO2:Er film is activated only under the forward bias with the positive voltage connecting to the p+-Si substrate. Such EL consists of the oxygen-vacancy-related emissions from TiO2 host and the characteristic visible and ∼1540 nm emissions from the Er3+ ions, while the EL from the LED with the 850 °C-annealed TiO2:Er film can only be enabled by the reverse bias with the negative voltage applied on the p+-Si substrate. Such EL features only the visible and ∼1540 nm emissions from the Er3+ ions. The difference in the EL behaviors of the two LEDs as mentioned above is found to be ascribed to the different electrical conduction mechanisms.

Photoluminescence Around 1.54μm Wavelength from Erbium-doped Silicon Dependence on Annealing Temperature

Sensitizing Properties of Luminescence Centers on the Emission of Er3+ in Si-Rich Sio2 Film

[Microstructure of Erbium-Doped Si-rich Thermal Oxidation SiO2/Si Luminescent Thin Films].

Photoluminescence Properties of Er-Doped Si/Al_2O_3 Multilayer Films

[Photoluminescence from Si and Er Dual-Implanted Si-rich Thermal Oxidation SiO2/Si Thin Films].

Photoluminescence Measurement on Erbium-Doped Silicon

Temperature Dependence of Sensitized Er3+ Luminescence in Silicon-Rich Oxynitride Films

[Photoluminescence from Er-doped Silicon-Rich Silicon Oxide Film and Er-doped Silicon-Rich Silicon Nitride Film and Its Annealing Behavior].

A Novel Method to Achieve 1.54 Μm Light Emission from Silica Thin Films

Control of the Formation and Luminescent Properties of Polymorphic Erbium Silicates on Silicon

Influence of annealing on microstructures and photoluminescence of nano-composite silicon film

Photoluminenscence from Er3+ ions in a-SiNxOy films

Surface Structure and 1.54μm Light Emission of Silicon Plus Erbium Dual-Implanted Thermal SiO_2/Si Thin Film

Intense Photoluminescence from Eu-doped Silicon-Rich Silicon Oxide Films Prepared by Electron Beam Evaporation

Structure and Luminescence Evolution of Annealed Europium-doped Silicon Oxides Films

Formation and Photoluminescence Characteristics of Er-related Nanostructures on Si(001) Substrate Covered with an Ultrathin SiO2 Film

Efficient Sensitized Photoluminescence of Er Silicate in Silicon Oxide Films Embedded with Amorphous Silicon Clusters, Part I: Fabrication

A Novel Approach of Photoluminescence from Erbium-Doped Silicon-Based Materials

Electroluminescence from Silicon-Based Light-Emitting Devices with Erbium-Doped TiO2 Films Annealed at Different Temperatures

Enhanced Luminescence of Erbium Doped Ga2O3 Films and Devices by Optimizing Annealing Process

Annealing temperature dependence of Er3+ photoluminescence in alternately Er-doped Si-rich Al2O3 multilayer film