Abstract:The Circular Electron Positron Collider (CEPC) is proposed as a Higgs factory to produce adequate events, which are the basis for high-precision measurements of the Higgs boson. The vertex detector in the CEPC should meet the requirements of a low material budget, high spatial resolution, fast readout speed and low power consumption. A monolithic active pixel sensor (MAPS) has been selected as the most promising technology for the vertex detector. The MIC4 sensor is the first prototype developed within the preliminary R&D activities of the CEPC vertex detector. It has been implemented in the TowerJazz 180 nm CMOS image sensor (CIS) process. It measures 3.1 mm x 4.6 mm and features a 128 row x 64 column pixel array with a pixel pitch of 25 mu m. In this work, a binary front-end has been designed for a compact pixel combined with a sparsified readout circuitry. Each pixel is composed of an amplifier, a shaper, a discriminator and digital logic. A new asynchronous zero-suppression data-driven readout circuit architecture is proposed and implemented in MIC4. We have performed some initial tests on this chip and obtained detailed results. The front-end features a peaking time below 1 mu s, a shaping time less than 3 mu s, a charge threshold of approximately 100 e(-), an average temporal noise (TN) of 6 e(-) and a fixed pattern noise (FPN) of 36 e(-). The addresses of the fired pixels can be readout in the digital part of the chip at a clock running at 30 MHz with the new data-driven readout circuit architecture. The hit map under Fe-55 X-ray exposure shows that the sensor designed in MIC4 works well. The probability of single event latch-up (SEL) sigma(SEL) is 1.02 x 10(-6) cm(2) at a linear energy transfer (LET) of 20.05 MeV cm(2)/mg.

Charge collection and non-ionizing radiation tolerance of CMOS pixel sensors using a 0.18 μm CMOS process

A Full Functional Monolithic Active Pixel Sensor Prototype for the CEPC Vertex Detector

Beam Test of a Monolithic Active Pixel Sensor for the CEPC Vertex Detector

Characterization of the first prototype CMOS pixel sensor developed for the CEPC vertex detector

Characterization of a CMOS Pixel Sensor Prototype for the CEPC Vertex Detector

Data Acquisition System for CEPC Vertex Detector Prototype

Radiation hardness study on a CMOS pixel sensor for charged particle tracking

Beam test of a 180 nm CMOS Pixel Sensor for the CEPC vertex detector

An Asynchronous Data-Driven Readout Prototype For Cepc Vertex Detector

A Monolithic Active Pixel Sensor Prototype for the CEPC Vertex Detector

A Simulation System and Its Applications for Signal Readout of CMOS Pixel Sensors in High Energy Physics Experiments

Characterization of a CMOS pixel sensor for charged particle tracking

Simulations of CMOS pixel sensors with a small collection electrode, improved for a faster charge collection and increased radiation tolerance

A high speed, low power consumption LVDS interface for CMOS pixel sensors

Design and Performance of HV CMOS Sensors for Future Colliders by the RD50 Collaboration

Design and initial characterization of MIC4, the monolithic active pixel sensor prototype for CEPC vertex detector

High data-rate readout logic design of a 512 × 1024 pixel array dedicated for CEPC vertex detector

Design and characterisation of the JadePix-3 CMOS pixel sensor

Charged particle detection using a CMOS active pixel sensor

Charged particle detection performances of CMOS pixel sensors produced in a 0.18 um process with a high resistivity epitaxial layer

Characterization of passive CMOS sensors with RD53A pixel modules