Abstract:Graphene transistors are of considerable interest for radio frequency (rf) applications. High-frequency graphene transistors with the intrinsic cutoff frequency up to 300 GHz have been demonstrated. However, the graphene transistors reported to date only exhibit a limited extrinsic cutoff frequency up to about 10 GHz, and functional graphene circuits demonstrated so far can merely operate in the tens of megahertz regime, far from the potential the graphene transistors could offer. Here we report a scalable approach to fabricate self-aligned graphene transistors with the extrinsic cutoff frequency exceeding 50 GHz and graphene circuits that can operate in the 1-10 GHz regime. The devices are fabricated on a glass substrate through a self-aligned process by using chemical vapor deposition (CVD) grown graphene and a dielectrophoretic assembled nanowire gate array. The self-aligned process allows the achievement of unprecedented performance in CVD graphene transistors with a highest transconductance of 0.36 mS/μm. The use of an insulating substrate minimizes the parasitic capacitance and has therefore enabled graphene transistors with a record-high extrinsic cutoff frequency (> 50 GHz) achieved to date. The excellent extrinsic cutoff frequency readily allows configuring the graphene transistors into frequency doubling or mixing circuits functioning in the 1-10 GHz regime, a significant advancement over previous reports (∼20 MHz). The studies open a pathway to scalable fabrication of high-speed graphene transistors and functional circuits and represent a significant step forward to graphene based radio frequency devices.

Radio-Frequency Power Amplifier Based on CVD Graphene Field-Effect Transistor

A 30-680-mhz GaAs Phemt Power Amplifier with Guanella-type Transformers Integrated on a Flexible Printed Circuit Board

Graphene Field Effect Transistor’s Circuit Modeling and Radio Frequency Application Study

Graphene Distributed Amplifiers: Generating Desirable Gain for Graphene Field-Effect Transistors

Compact 50-62 GHz Current-Reused Low-Noise Amplifier with Gate-Drain Transformer Feedback

Graphene field-effect transistors with gigahertz-frequency power gain on flexible substrates

Graphene/Silicon-on-insulator Heterogenous Cascode Amplifier with High Gain

Wafer-scalable High-Performance CVD Graphene Devices and Analog Circuits

Carbon Nanotube Based Radio Frequency Transistors For K-Band Amplifiers

Scalable Fabrication of Self-Aligned Graphene Transistors and Circuits on Glass.

Double-balanced Mixer Based on Monolayer Graphene Fieldeffect Transistors

A Pure Frequency Tripler Based on Cvd Graphene

High Mobility Flexible Graphene Field-Effect Transistors and Ambipolar Radio-Frequency Circuits

Frequency Multiplier Based On Back-Gated Graphene Fets With M-Shaped Resistance Characteristics

Graphene Based Field Effect Transistor Analog/RF Performance Analysis from Non-equilibrium Green’s Function Simulation

Deep-submicron Graphene Field-Effect Transistors with State-of-Art Fmax

High-Frequency Flexible Graphene Field-Effect Transistors with Short Gate Length of 50 nm and Record Extrinsic Cut-Off Frequency

200 GHz Maximum Oscillation Frequency in CVD Graphene Radio Frequency Transistors.

142 GHz Amplifier with 18.5 Db Gain and 7.9 Mw DC Power in 65 Nm CMOS

High-Performance CVD Bernal-Stacked Bilayer Graphene Transistors for Amplifying and Mixing Signals at High Frequencies.

Radio-frequency transistors from millimeter-scale graphene domains