Abstract:Background: Clinical trials assessing the impact of errors in self-monitoring of blood glucose (SMBG) on the quality of glycemic control in diabetes are inherently difficult to execute. Consequently, the objectives of this study were to employ realistic computer simulation based on a validated model of the human metabolic system and to provide potentially valuable information about the relationships among SMBG errors, risk for hypoglycemia, glucose variability, and long-term glycemic control. Methods: Sixteen thousand computer simulation trials were conducted using 100 simulated adults with type 1 diabetes. Each simulated subject was used in four simulation experiments aiming to assess the impact of SMBG errors on detection of hypoglycemia (experiment 1), risk for hypoglycemia (experiment 2), glucose variability (experiment 3), and long-term average glucose control, i.e., estimated hemoglobin A1c (HbA1c)(experiment 4). Each experiment was repeated 10 times at each of four increasing levels of SMBG errors: 5, 10, 15, and 20% deviation from the true blood glucose value. Results: When the permitted SMBG error increased from 0 to 5–10% to 15–20%—the current level allowed by International Organization for Standardization 15197—(1) the probability for missing blood glucose readings of 60 mg/dl increased from 0 to 0–1% to 3.5–10%; (2) the incidence of hypoglycemia, defined as reference blood glucose ≤70 mg/dl, changed from 0 to 0–0% to 0.1–5.5%; (3) glucose variability increased as well, as indicated by control variability grid analysis; and (4) the incidence of hypoglycemia increased from 15.0 to 15.2–18.8% to 22–25.6%. When compensating for this increase, glycemic control deteriorated with HbA1c increasing gradually from 7.00 to 7.01–7.12% to 7.26–7.40%. Conclusions: A number of parameters of glycemic control deteriorated substantially with the increase of permitted SMBG errors, as revealed by a series of computer simulations (e.g., in silico) experiments. A threshold effect apparent between 10 and 15% permitted SMBG error for most parameters, except for HbA1c, which appeared to be increasing relatively linearly with increasing SMBG error above 10%.

Critical Thickness in LaNiO3 Ultrathin Films: the Influence of Underlayer

Critical Thickness in Superconducting LaAlO_{3}/KTaO_{3}(111) Heterostructures.

Thickness-dependent Transport Properties of La2/3Sri/3MnO3 Polycrystalline Films

Nature of the metal-insulator transition in few-unit-cell-thick LaNiO3 films

Influence of substrate on structural and transport properties of LaNiO3 thin films prepared by pulsed laser deposition

Critical Thickness and Orbital Ordering in Ultrathinla0.7sr0.3mno3films

Effects of the surface termination and oxygen vacancy positions and on LaNiO$_{3}$ ultra-thin films: First-principles study

Impact of Blood Glucose Self-Monitoring Errors on Glucose Variability, Risk for Hypoglycemia, and Average Glucose Control in Type 1 Diabetes: An In Silico Study

Substrate and Thickness Effects on Structure and Transport Properties of La2/3ca1/3mno3 Films

Tuning up or down the critical thickness in LaAlO3/SrTiO3 through in situ deposition of metal overlayers

Surface and Interface Properties of La2/3Sr1/3MnO3 Thin Films on SrTiO3 (001)

Thickness Effect On (La0.26bi0.74)(2)Ti4o11 Thin-Film Composition And Electrical Properties

Effects of Lattice Strains on the Interfacial Potential in La0.67ca0.33mno3/Srtio3 : Nb Heterojunctions

Thickness-induced Insufficient Oxygen Reduction in La2−xCexCuO4 ± Δthin Films

Critical Thickness in Superconducting LaAlO 3 / KTa O 3 ( 111 ) Heterostructures

The Conducting Channel at the LaAlO$_3$/SrTiO$_3$ Interface

Thickness Effect on (la 0.26 Bi 0.74 ) 2 Ti 4 O 11 Thin-Film Composition and Electrical Properties

Understanding the Role of Defective Phases on the Conductivity Behavior of Strained Epitaxial LaNiO 3 Thin Films

Thickness Dependence of Transport Behaviors in SrRuO3 /srtio3 Superlattices

Inevitable high density of oxygen vacancies on the surface of LaAlO3/SrTiO3 heterostructures

Interface Electron Transfer and Thickness Dependent Transport Characteristics of La0.7Sr0.3VO3 Thin Films.