Abstract:The emerging two-dimensional electron gas (2DEG) at the interface between polar LaAlO3 (LAO) and nonpolar SrTiO3 (STO) provides potential applications in low-dimensional nanoelectronic devices because of its exceptional electron transport property. To form 2DEG in the LAO/STO heterostructure (HS), a minimum thickness of approximately 4 unit cells of LAO is necessary. Herein, we modeled the n-type (TiO2)(0)/(LaO)(+1) HS by depositing (LAO)n (n = 4, 5, and 6) thin films on the STO substrate and explored strain effects on the critical thickness for forming 2DEG in the LAO/STO HS-based slab systems using first-principles electronic structure calculations. A vacuum layer was added along the [001] direction on the LAO film to resemble the actual epitaxial growth process of the materials. An insulator-to-metal transition is predicted in unstrained (LAO)n/STO systems when n ≥ 5. Our calculations indicate that O 2px/py states give rise to the surface conductivity, while Ti 3dxy states are responsible for the interfacial conductivity. For the tensilely strained HS system, an increased film thickness of LAO (n ≥ 6) is required to form the 2DEG, and a remarkable shift of O 2p orbitals toward higher energy in LAO layers is found, which is caused by the strain-induced change of the electrostatic potential. For the compressively strained HS system, the critical thickness of LAO film for forming 2DEG is between 5 and 6 unit cells of LAO. In addition, our calculations suggest that the interfacial charge carrier density and magnetic moment can be optimized when a moderate tensile strain is applied on the STO substrate in the ab-plane.

Critical thickness in LaNiO 3 ultrathin films: the influence of underlayer

Critical Thickness in Superconducting LaAlO_{3}/KTaO_{3}(111) Heterostructures.

Thickness-dependent Transport Properties of La2/3Sri/3MnO3 Polycrystalline Films

Nature of the metal-insulator transition in few-unit-cell-thick LaNiO3 films

Influence of substrate on structural and transport properties of LaNiO3 thin films prepared by pulsed laser deposition

Critical Thickness and Orbital Ordering in Ultrathinla0.7sr0.3mno3films

Effects of the surface termination and oxygen vacancy positions and on LaNiO$_{3}$ ultra-thin films: First-principles study

First-principles characterization of the critical thickness for forming metallic states in strained LaAlO₃/SrTiO₃(001) heterostructure

Substrate and Thickness Effects on Structure and Transport Properties of La2/3ca1/3mno3 Films

Tuning up or down the critical thickness in LaAlO3/SrTiO3 through in situ deposition of metal overlayers

Surface and Interface Properties of La2/3Sr1/3MnO3 Thin Films on SrTiO3 (001)

Thickness Effect On (La0.26bi0.74)(2)Ti4o11 Thin-Film Composition And Electrical Properties

Effect Of Substrate Temperature On The Microstructure And Transport Properties Of Highly (100)-Oriented Lanio3-Delta Films By Pure Argon Sputtering

Strain State, Microstructure and Electrical Transport Properties of Lanio3 Films Grown on Si Substrates

Effects of Lattice Strains on the Interfacial Potential in La0.67ca0.33mno3/Srtio3 : Nb Heterojunctions

Thickness-induced Insufficient Oxygen Reduction in La2−xCexCuO4 ± Δthin Films

Critical Thickness in Superconducting LaAlO 3 / KTa O 3 ( 111 ) Heterostructures

The Conducting Channel at the LaAlO$_3$/SrTiO$_3$ Interface

Preparation and Study of Conductive LaNiO3 Thin Films on Different Substrates

Thickness Effect on (la 0.26 Bi 0.74 ) 2 Ti 4 O 11 Thin-Film Composition and Electrical Properties

Understanding the Role of Defective Phases on the Conductivity Behavior of Strained Epitaxial LaNiO 3 Thin Films