Abstract:Light emission from semiconductors depends not only on the efficiency of carrier injection and recombination but also extraction efficiency. For ultraviolet emission from high band gap materials such as ZnO, nanowires have higher extraction efficiencies than thin films, but conventional approaches for creating a p-n diode result in low efficiency. We exploited the noncentral symmetric nature of n-type ZnO nanowire/p-type GaN substrate to create a piezoelectric ! potential within the nanowire by applying stress. Because of the polarization of ions in a crystal that has noncentral symmetry, a piezoelectric potential (piezopotential) is created in the crystal under stress. The piezopotential acts as a "gate" voltage to tune the charge transport and enhance carrier injection, which is called the piezo-phototronic effect. We propose that band modification traps free carriers at the interface region in a channel created by the local piezoelectric charges. The emission intensity and injection current at a fixed applied voltage have been enhanced by a factor of 17 and 4, respectively, after applying a 0.093% compressive strain and improved conversion efficiency by a factor of 4.25. This huge enhanced performance is suggested arising from an effective increase in the local "biased voltage" as a result of the band modification caused by piezopotential and the trapping of holes at the interface region in a channel created by the local piezoelectric charges near the interface. Our study can be extended from ultraviolet range to visible range for a variety of optoelectronic devices that are important for today's safe, green, and renewable energy technology.

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Finite element method calculations of ZnO nanowires for nanogenerators

Piezoelectric nanogenerator using p-type ZnO nanowire arrays.

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Electrical Actuation and Readout in a Nanoelectromechanical Resonator Based on a Laterally Suspended Zinc Oxide Nanowire

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In-Situ Study of Surface Work Function, Electrical Characteristic and Field Emission Property of Individual Zno Nanowire

Time-Resolved Open-Circuit Conductive Atomic Force Microscopy for Quantitative Analysis of Nanowire Piezoelectricity and Triboelectricity

Numerical Modeling and Simulation of Zno Nanowire Devices for Energy Harvesting

Piezoelectric field effect transistor and nanoforce sensor based on a single ZnO nanowire.

Investigation of the diameter-dependent piezoelectric response of semiconducting ZnO nanowires by Piezoresponse Force Microscopy and FEM simulations

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Observation of a 2D Electron Gas and the Tuning of the Electrical Conductance of ZnO Nanowires by Controllable Surface Band-Bending

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Modeling and Experimental Study of Nanoelectromechanical Oscillator Using Single Zinc Oxide Nanowire

Piezoelectric Characterization of a Single Zinc Oxide Nanowire Using a Nanoelectromechanical Oscillator