The Effect of Humidity on the Dielectric Properties of (in + Nb) Co-Doped SnO2 Ceramics

J. Wang,Y. M. Guo,S. T. Wang,L. Tong,J. Sun,G. B. Zhu,C. C. Wang

DOI: https://doi.org/10.1016/j.jeurceramsoc.2018.09.040

IF: 5.7

2019-01-01

Journal of the European Ceramic Society

Abstract:(In + Nb) co-doped SnO2 ceramics, (In0.5Nb0.5)(x)Sn1-xO2 (INSO) with x = 0, 0.0005, 0.001, 0.01, and 0.1, were prepared by sol-gel method. Dielectric properties and humidity sensitivity of these samples were systematically investigated. Our results revealed that there exists a critical doping level of x(c) similar to 0.001 separating the dielectric behavior and humidity sensitivity of INSO into two different regions: In region I of x <= x(c), the main relaxing species are In-Sn-OHO center dot complex dipoles, which greatly enhances the dielectric constant. The humidity sensitivity was found to decrease with increasing doping level and have positive effect on the dielectric properties of the samples. In region II of x > x(c), the main relaxing species are localized holes, which leads to polaronic relaxation and gradually weakens the dielectric constant enhancement. The humidity sensitivity was found to increase with increasing doping level and have negative effect on the dielectric properties of the samples.