Abstract:GeSn alloys are metastable semiconductors that have been proposed as building blocks for silicon-integrated shortwave and midwave infrared photonic and sensing platforms. Exploiting these semiconductors requires, however, the control of their epitaxy and their surface chemistry to reduce nonradiative recombination that hinders the efficiency of optoelectronic devices. Herein, we demonstrate that combined sulfur- and iodine-based treatments yield effective passivation of Ge and Ge0.9Sn0.1 surfaces. X-ray photoemission spectroscopy and in situ spectroscopic ellipsometry measurements were used to investigate the dynamics of surface stability and track the reoxidation mechanisms. Our analysis shows the largest reduction in oxide after HI treatment, while HF + (NH4)2S results in a lower reoxidation rate. A combined HI + (NH4)2S treatment preserves the lowest oxide ratio of <10% up to 1 h of air exposure, while less than half of the initial oxide coverage is reached after 4 h. These results highlight the potential of S- and I-based treatments in stabilizing the GeSn surface chemistry, thus enabling a passivation method that is compatible with materials and device processing.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acs.jpcc.1c01902?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acs.jpcc.1c01902</a>.Time evolution of the imaginary part of pseudodielectric function ⟨ε2⟩ for Ge and GeSn; dynamic AFM maps for Ge before and after treatment; XPS results of Ge surface treated by T1, T2, and T3; evolution of Ge and GeSn oxidation beyond 4 h of exposure to air after T1 and T2 (<a class="ext-link" href="/doi/suppl/10.1021/acs.jpcc.1c01902/suppl_file/jp1c01902_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.

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