Abstract:Silicon carbide is a promising semiconductor material for electrical and optoelectronic applications in the area of high power, high temperature, high frequency and intense radiation. Many groups have worked on growing SiC bulk crystals by sublimation from SiC powder source at a temperature above 2000 oC under an argon environment. They have also worked on improving the crystal growth rate. Traditional approach is to increase furnace temperature to enhance the growth rate. However, high cost of inert crucible at high temperature and impurity caused by crucible degradation set limit on the maximum growth rate which can be achieved. Current existing crucible and other components in the furnace are no longer passive at high temperature. Also understanding of vapor transport during powder sublimation and the interplay between vapor transport and powder sublimation is important for the optimization of the sublimation growth process. A comprehensive numerical model combining heat transfer, sublimation, species transport, and powder porosity evolution of SiC sublimation growth process is developed in this paper. The mechanism of vapor transport is described, in which a driving force is introduced to explain vapor transport. A new method to increase crystal growth rate is proposed based on the model. The new method includes changing the initial powder porosity and creating a hole in the packed powder. Simulation results for the case with a central hole and without hole are presented. The results show that the powder sublimation rate increases by creating a hole, and it is also validated by experiments. The results also reveal that the mass of the as-grown crystal increases if the powder sublimation rate increases. Finally, the powder geometry is optimized using numerical simulations.

Theoretical Investigation on Surface Kinetics of the Sic Single Crystal Growth

Application of self-consistent rate equations approach for SiC (0001) surface epitaxial growth

Numerical Simulation of a Novel Method for PVT Growth of SiC by Adding a Graphite Block

Effects of Solution Height and Crystal Rotation on the Solution Flow Behavior in the Top-Seeded Solution Growth of SiC Single Crystals

Role of oxygen in surface kinetics of SiO2 growth on single crystal SiC at elevated temperatures

Improvement of surface morphology by optimizing the growth conditions in solution growth of SiC single crystal

Dynamic behavior of clusters in the early stage of SiC (0001) epitaxial growth: A Kinetic Monte Carlo study

Growth Kinetics and Thermal Stress in the Sublimation Growth of Silicon Carbide

Study of Effects of Varying Parameters on the Dislocation Density in 200 Mm Sic Bulk Growth

Multi-Scale Simulation of Nucleation and Growth of Nanoscale SiC on Si

Molecular Dynamics Simulations of the Effect of Carbon Concentration on Silicon Carbide Crystal Growth

Effects of Surface Size and Shape of Evaporation Area on SiC Single-Crystal Growth Using the PVT Method

Numerical investigation of carbon and silicon carbide contamination during the melting process of the Czochralski silicon crystal growth

Investigation of Oxygen Behavior under Different Melt Flow, Diffusion Boundary Layer, and Crystal-Melt Interface in a 300 mm Silicon Crystal Growth with Cusp Magnetic Field

Surface Control of AlN Single Crystal Growth on SiC Substrate

Mechanism of SiC formation by Si surface carbonization using CO gas

The Growth of Si on Sic Complex Substrate by Cvd

Measurement of Thermal Field Temperature Distribution Inside Reaction Chamber for Epitaxial Growth of Silicon Carbide Layer

Novel Method for High Speed SiC Vapor Growth

Effects of different incidence rates of carbon and silicon clusters on the surface properties of SiC films

Multi-length Scale Monte Carlo Simulation of the Growth Process of SiC Film by Chemical Vapor Deposition