B13-O-04 Fabrication of High Energy Resolution Silicon Drift Detector for Energy Dispersive X-ray Spectrometer

Yu-Chao Ma,Chiao-Chun Hsu,Fan-Gang Tseng,Chih-Hao Lee,Yun-Ju Chuang,Fu-Rong Chen
DOI: https://doi.org/10.1093/jmicro/dfv116
2015-01-01
Microscopy
Abstract:High resolution silicon drift detector (SDD) have been designed, fabricated and tested. The SDD is achieved by fully depleting silicon substrates with moderate reverse biased. The strong and parallel electric fields drive electrons excited by characteristic X-ray toward collecting anode. The radiation entrance window on the opposite side is made by a non-structured shallow implanted junction that gives a homogeneous sensitivity over the whole detection area. In order to enhance energy resolution, reduction of thermal noise is essential. The weak signal delivering to primary FET is usually disturbed by thermal noise and amplification at the same time. Therefore, the best way to solve thermal noise is to integrate FET into SDD and cool them down together with a Peltier cooler. The design process is showed in Fig. 1 and will be tested the response for detector exposed to the X-ray source in the future. The goal value of FWHM of Mn Ka line at 5.895 keVof a radioactive 55 Fe source is 170 eV at -20°C.
What problem does this paper attempt to address?