Fabrication and Characterization of a Sensitivity Multi-Annular Backscattered Electron Detector for Desktop SEM

Wei-Ruei Lin,Yun-Ju Chuang,Chih-Hao Lee,Fan-Gang Tseng,Fu-Rong Chen
DOI: https://doi.org/10.1109/isne.2018.8394642
2018-01-01
Abstract:A sensitivity silicon p-n diodes for detecting backscattering electrons in SEM was proposed and fabricated. The multi-annular configuration enables to provide higher sensitivity of Z-contrast and better surface topography contrast of BSE image. In this study, the multi-annular backscattered electron detector (BSED) can provide enhancement of surface topography contrast and image contrast with 105% and 42% as compared with commercial BSED which with the multi-fan configuration. We also designed a high sensitivity to low energy electrons detector which with lateral p-n junctions and Al metal grids.
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