Abstract:The features of eight-period In 0.2 Ga 0.8 N/GaN quantum wells (QWs) with silicon (Si) doping in the first two to five quantum barriers (QBs) in the growth sequence of blue light-emitting diodes (LEDs) are explored. Epilayers of QWs’ structures are grown on 20 pairs of In 0.02 Ga 0.98 N/GaN superlattice acting as strain relief layers (SRLs) on patterned sapphire substrates (PSSs) by a low-pressure metal-organic chemical vapor deposition (LP-MOCVD) system. Temperature-dependent photoluminescence (PL) spectra, current versus voltage ( I - V ) curves, light output power versus injection current ( L - I ) curves, and images of high-resolution transmission electron microscopy (HRTEM) of epilayers are measured. The consequences show that QWs with four Si-doped QBs have larger carrier localization energy (41 meV), lower turn-on (3.27 V) and breakdown (− 6.77 V) voltages, and higher output power of light of blue LEDs at higher injection current than other samples. Low barrier height of QBs in a four-Si-doped QB sample results in soft confinement potential of QWs and lower turn-on and breakdown voltages of the diode. HRTEM images give the evidence that this sample has relatively diffusive interfaces of QWs. Uniform spread of carriers among eight QWs and superior localization of carriers in each well are responsible for the enhancement of light output power, in particular, for high injection current in the four-Si-doped QB sample. The results demonstrate that four QBs of eight In 0.2 Ga 0.8 N/GaN QWs with Si doping not only reduce the quantum-confined Stark effect (QCSE) but also improve the distribution and localization of carriers in QWs for better optical performance of blue LEDs.

Growth Optimization of Spin-Transport Barriers Used for Spin-Polarized Light-Emitting Diodes Based on InGaAs Quantum Dots

Optical Property of Vertically Stacked, Selfassembled Inas Quantum Dots in Al0.5ga0.5as Barriers

Effectiveness of AlGaAs barrier layers as a redistribution channel of photoexcited carriers on anomalous temperature dependence of photoluminescence properties of GaAs quantum dots

Ingan/Gan Multilayer Quantum Dots Yellow-Green Light-Emitting Diode with Optimized Gan Barriers

Improved Optical Performance of InAs Quantum Dot Structure via Suitable Manipulation of GaAs Cap Layer Growth

Optimization Design of Quantum Barrier of InGaN Quantum Well in Blue Light-Emitting Diode

Performance Analysis of Gan-Based Light-Emitting Diodes with Lattice-Matched Ingan/Alinn/Ingan Quantum-Well Barriers

Low-Density Inas Quantum Dots Growth by Molecular Beam Epitaxy

Temperature dependence of inter-dot electron-spin transfer among laterally coupled excited states in high-density InGaAs quantum dots

Growth Optimization of Self-Organized InSb/InAs Quantum Dots

Growth And Emission Tuning Of Inas/Inp Quantum Dots Superlattice

Effects of Modulation P-Doping on Thermal Stability of InAs/GaAs Quantum Dot Superluminescent Diodes

Optimal Silicon Doping Layers of Quantum Barriers in the Growth Sequence Forming Soft Confinement Potential of Eight-Period In0.2Ga0.8N/GaN Quantum Wells of Blue LEDs

Spin Injection and Relaxation in P -Doped (in,ga)as/gaas Quantum-Dot Spin Light-Emitting Diodes at Zero Magnetic Field

Electrical Spin Injection Into Ingaas/Gaas Quantum Wells: A Comparison Between Mgo Tunnel Barriers Grown By Sputtering And Molecular Beam Epitaxy Methods

Light-Emitting AlGaAs/GaAs Diodes Based on InGaAs Strain-Compensated Quantum Wells with Minimized Internal Losses Caused by 940-nm Radiation Absorption

Explorations on Growth of Blue-Green-Yellow-Red InGaN Quantum Dots by Plasma-Assisted Molecular Beam Epitaxy.

Impact of Double Al<inf>0.1</inf>Ga<inf>0.9</inf>As Barrier on n-i-n InAs/GaAs Quantum Dot Infrared Photodetectors

Effect of Si Doping in Barriers of Ingan/Gan Multiple Quantum Wells on the Performance of Green Light-Emitting Diodes

Employing low-temperature barriers to achieve strain-relaxed and high-performance GaN-based LEDs.