Abstract:Edge structure and stability are crucial in determining both the morphology and the growth behaviours of hexagonal boron nitride (h-BN) domains in chemical vapour deposition (CVD) growth under near thermal equilibrium conditions. In this study, various edges of h-BN on three typical transition metal surfaces used for h-BN's CVD growth, Cu(111), Ni(111) and Rh(111), are explored with density functional theory calculations. Different from that in vacuum, our study shows that the formation of non-hexagonal rings, such as pentagon, heptagon or their pairs, is energetically not preferred and both zigzag (ZZ) edges are more stable than the armchair (AC) edge on all the explored catalyst surfaces under typical conditions of h-BN's CVD growth, which explains the broad experimental observation of triangular h-BN domains. More importantly, our results indicate that, instead of the pristine ZZ edge terminated with nitrogen atoms (ZZN), the triangular BN domains observed in experiments are likely to be enclosed with ZZ Klein edges having dangling atoms, ZZB + N or ZZN + B. By applying the theory of Wulff construction, we predicted that the equilibrium shape of a BN domain could be a hexagon enclosed with nitrogen-rich AC edges, triangles enclosed with two different types of ZZ Klein edges or a hexagon enclosed with boron-rich AC edges if the growth is in a N-rich, neutral or B-rich environment, respectively. This study presents how the edges and equilibrium shapes of h-BN domains can be controlled during the CVD synthesis and provides guidelines for further exploring the growth behaviours and improving the quality of CVD-prepared h-BN films.

Shape evolution of two dimensional hexagonal boron nitride single domains on Cu/Ni alloy and its applications in ultraviolet detection.

Chemical Vapor Deposition Growth of Large-Scale Hexagonal Boron Nitride with Controllable Orientation

Atomic Layers of Hybridized Boron Nitride and Graphene Domains

Three-leaf Dart-Shaped Single-Crystal BN Formation Promoted by Surface Oxygen

Grain Boundaries in Chemical-Vapor-deposited Atomically Thin Hexagonal Boron Nitride

Hexagonal Boron Nitride Growth on Cu-Si Alloy: Morphologies and Large Domains.

Large scale growth and characterization of atomic hexagonal boron nitride layers.

Controlling the Orientations of H-Bn During Growth on Transition Metals by Chemical Vapor Deposition

Unidirectional domain growth of hexagonal boron nitride thin films

Large-Area Orientation-Controlled Growth of Hexagonal Boron Nitride on Liquid Copper

Large-Scale Synthesis h-BN Films on Copper-Nickel Alloy by Atmospheric Pressure Chemical Vapor Deposition

The Transition Metal Surface Passivated Edges of Hexagonal Boron Nitride (H-Bn) and the Mechanism of H-Bn's Chemical Vapor Deposition (CVD) Growth

Wafer-scale CVD Growth of Monolayer Hexagonal Boron Nitride with Large Domain Size by Cu Foil Enclosure Approach

Controllable Growth of Triangular Hexagonal Boron Nitride Domains on Copper Foils by an Improved Low-Pressure Chemical Vapor Deposition Method

Ni Foam Assisted Synthesis of High Quality Hexagonal Boron Nitride with Large Domain Size and Controllable Thickness

Thickness-Controlled Synthesis of Uniform Hexagonal Boron Nitride Films on Metal Alloys by Chemical Vapor Deposition

Structure Evolution of Hbn Grown on Molten Cu by Regulating Precursor Flux During Chemical Vapor Deposition

Atomically Thin Hexagonal Boron Nitride and Its Heterostructures

Dynamic Observation of In-Plane H-Bn/graphene Heterostructures Growth on Ni(111)

Growth and characterization of uniformly distributed triangular single-crystalline hexagonal boron nitride grains on liquid copper surface

Epitaxial chemical vapour deposition growth of monolayer hexagonal boron nitride on a Cu(111)/sapphire substrate