Abstract:The binary alloy of titanium-tungsten (TiW) is an established diffusion barrier in high-power semiconductor devices, owing to its ability to suppress the diffusion of copper from the metallisation scheme into the surrounding silicon substructure. However, little is known about the response of TiW to high temperature events or its behaviour when exposed to air. Here, a combined soft and hard X-ray photoelectron spectroscopy (XPS) characterisation approach is used to study the influence of post-deposition annealing and titanium concentration on the oxidation behaviour of a 300~nm-thick TiW film. The combination of both XPS techniques allows for the assessment of the chemical state and elemental composition across the surface and bulk of the TiW layer. The findings show that in response to high-temperature annealing, titanium segregates out of the mixed metal system and upwardly migrates, accumulating at the TiW/air interface. Titanium shows remarkably rapid diffusion under relatively short annealing timescales and the extent of titanium surface enrichment is increased through longer annealing periods or by increasing the precursor titanium concentration. Surface titanium enrichment enhances the extent of oxidation both at the surface and in the bulk of the alloy due to the strong gettering ability of titanium. Quantification of the soft X-ray photoelectron spectra highlights the formation of three tungsten oxidation environments, attributed to WO$_2$, WO$_3$ and a WO$_3$ oxide coordinated with a titanium environment. This combinatorial characterisation approach provides valuable insights into the thermal and oxidation stability of TiW alloys from two depth perspectives, aiding the development of future device technologies.

Irradiation Behaviors of TiN Diffusion Barriers in Cu/PI Substrates

Effect of heat treatment on TiN diffusion barriers in copper thin film metallization on PI substrates

Diffusion and Adhesion Properties of Cu Films on Polyimide Substrates

Amorphous-like TiN Films as Barrier Layers for Copper

Improved TiN film as a diffusion barrier between copper and silicon

Sputtered Ru–Ti, Ru–N and Ru–Ti–N Films As Cu Diffusion Barrier

Properties of TiN films deposited by atomic layer deposition for through silicon via applications

Ta-based Barrier Layer Improved by Plasma Immersion Ion Implantation

Effect of heat treatment on the peel strength of two kinds of Cu film

Properties of Cu Film and Ti/Cu Film on Polyimide Prepared by Ion Beam Techniques

Displacement Reactions Between Metal Ions and Nitride Barrier Layer/Silicon Substrate

Electroless Cu Deposition on a TiN Barrier in CuSO[sub 4]-HF Solution

Atomic Layer Deposition Tin Barrier Layers For Through Silicon Via Applications

Influence of the Pt Barrier on Ti/Al/Pt/Au Ohmic Contacts to N-Gan Studied by Rutherford Backscattering Spectrometry and X-Ray Diffraction

Photocatalytic Surface Modification of PI Film for Electroless Copper Plating

Evaluation of the thermal stability of TiW/Cu heterojunctions using a combined SXPS and HAXPES approach

Effect of Ion Beam Bombardment on the Properties of Ni Films Deposited on Polyimide by Ion Beam Assisted Deposition

Atomic layer deposition of amorphous Ni-Ta-N films for Cu diffusion barrier

Thermal and Oxidation Stability of Ti$_x$W$_{1-x}$ Diffusion Barriers Investigated by Soft and Hard X-ray Photoelectron Spectroscopy

Cu Contact on NiSi/Si with Thin Ru/TaN Barrier

Deposition of TiN and TaN by Remote Plasma ALD for Cu and Li Diffusion Barrier Applications