Abstract:The distribution of intrinsic point defects, comprising vacancies and self-interstitials, plays a pivotal role in determining the quality and properties of silicon wafers, with profound implications for their applications in the semiconductor industry. Previous research posits that the dominant defect type in Czochralski (Cz) Si can be manipulated by adjusting the ratio of the pulling rate (V) to the axial thermal gradient (G). The critical value of V /G establishes the equilibrium between vacancies and self-interstitials. However, conventional theories often consider ( V /G ) (crit) to be a constant based on the assumption of thermal equilibrium. In this study, we present evidence that the formation and diffusion of the intrinsic point defects are influenced by thermal stress, rendering ( V/ G ) (crit) dependent on thermal stress distribution. Through a combination of first-principles calculations and finite element simulations, we establish a quantitative theoretical model that considers thermal stress. Based on this model, the impact of thermal stress on the defect distribution during Cz Si growth and the value of ( V/ G ) (c rit) is elucidated. Our findings are validated through experimental growth of Cz Si and analytical testings. This work not only contributes to a deeper understanding of the microscopic mechanisms governing defect dynamics in Si but also advances Cz Si growth technology, ultimately enhancing the quality of the resultant Si wafers.

Void-type defects in large diameter czochralski silicon crystals

Void-like Defects in Annealed Czochralski Silicon

Grown-In Defects in Heavily Boron-Doped Czochralski Silicon

Micro-defects in Ge doped Czochralski grown Si crystals

On the Assumed Impact of Germanium Doping on Void Formation in Czochralski-Grown Silicon

Grown-in Defects in Heavily Phosphorus-Doped Czochralski Silicon

Germanium in Czochralski Silicon

Grown-In Defects in Nitrogen-Doped Czochralski Silicon

Vacancy-Type Defects in Nitrogen-Doped Silicon

Germanium effect on void defects in Czochralski silicon

Recognition and Imaging of Point Defect Diffusion, Recombination, and Reaction During Growth of Czochralski-Silicon Crystals

Extended Defects in Nitrogen-Doped Czochralski Silicon During Diode Process

Correlation Between Oxygen Precipitation and Extended Defects in Czochralski Silicon: Investigation by Means of Scanning Infrared Microscopy

Crystal-originated Particles in Germanium-Doped Czochralski Silicon Crystal

Role of Nitrogen Related Complexes in the Formation of Defects in Silicon

Effect of Hydrogen Annealing on Voids in arge-Diameter Czochralski Silicon

The Advance of Research on Oxygen Precipitates in NCZ Silicon

Flow Pattern Defects in Germanium-Doped Czochralski Silicon Crystals

Oxygen Precipitation in Nitrogen Doped Czochralski Silicon Wafers. I. Formation Mechanisms of Near-Surface and Bulk Defects

Irradiation Defects in Silicon Crystal

Impact of Thermal Stress on Intrinsic Point Defect in Czochralski Crystal Growth: Developing a Quantitative Model for Defect Formation and Distribution