Abstract:The surface orientation can have profound effects on the atomic-scale processes of crystal growth, and is essential to such technologies as GaN-based light-emitting diodes and high-power electronics. We investigate the dependence of homoepitaxial growth mechanisms on the surface orientation of a hexagonal crystal using kinetic Monte Carlo simulations. To model GaN metal-organic vapor phase epitaxy, in which N species are supplied in excess, only Ga atoms on a hexagonal close-packed (HCP) lattice are considered. The results are thus potentially applicable to any HCP material. Growth behaviors on c-plane ${(0 0 0 1)}$ and m-plane ${(0 1 \overline{1} 0)}$ surfaces are compared. We present a reciprocal space analysis of the surface morphology, which allows extraction of growth mode boundaries and direct comparison with surface X-ray diffraction experiments. For each orientation we map the boundaries between 3-dimensional, layer-by-layer, and step flow growth modes as a function of temperature and growth rate. Two models for surface diffusion are used, which produce different effective Ehrlich-Schwoebel step-edge barriers, and different adatom diffusion anisotropies on m-plane surfaces. Simulation results in agreement with observed GaN island morphologies and growth mode boundaries are obtained. These indicate that anisotropy of step edge energy, rather than adatom diffusion, is responsible for the elongated islands observed on m-plane surfaces. Island nucleation spacing obeys a power-law dependence on growth rate, with exponents of -0.24 and -0.29 for m- and c-plane, respectively.

Simulation of Epitaxial Growth Interface on Convex Substrate Using Phase Field Crystal Method

Phase-Field-Crystal Simulation of Nonequilibrium Crystal Growth

Thin interface analysis of a phase-field model for epitaxial growth with nucleation and Ehrlich–Schwoebel effects

A Phase-Field Model Without Artificial Curvature Effect for the Crystal Growth Simulation

Atomic scale modeling of vicinal surface growth from melts using the phase-field crystal method

Phase-Field Simulation of Three-Dimensional Dendritic Growth

Phase-field Simulations on the Electrocaloric Properties of Ferroelectric Nanocylinders with the Consideration of Surface Polarization Effect

Phase Field Simulation Research on the Microstructural Evolution of Monocrystalline and Polycrystalline Silicon

One-dimensional Crystal Growth Model on a Square Lattice Substrate

Phase-field Computations of Anisotropic Ice Crystal Growth on a Spherical Surface

Continuum Modeling of Surface Roughening in Heteroepitaxial Structures Based on Phase Field Theory

Growth of Curved Crystals: Competition Between Topological Defect Nucleation and Boundary Branching.

Phase-field approximation of an epitaxial growth model with adatoms

PHASE-FIELD SIMULATION OF THE EFFECT OF KINETIC ANISOTROPY ON CRYSTAL GROWTH IN UNDERCOOLED MELTS

Kinetic Monte Carlo simulations of GaN homoepitaxy on c- and m-plane surfaces

A Numerical Study of Stress Controlled Surface Diffusion During Epitaxial Film Growth

Numerical modeling of faceted crystal growth using a lattice Boltzmann-phase field model with a new interfacial energy function

Study of phase transition properties in epitaxial ferroelectric film

Derivation of a Continuum Model for Epitaxial Growth with Elasticity on Vicinal Surface.

The influence of the crystal lattice on coarsening in unstable epitaxial growth

Kinetic Monte Carlo method for epitaxial 3C-SiC (0001) growth on vicinal surfaces