Narrow Linewidth Semiconductor Laser Diodes

LUO Yi,HUANG Jin,SUN Chang-zheng
DOI: https://doi.org/10.3969/j.issn.1007-2276.2007.02.001
2007-01-01
Infrared and Laser Engineering
Abstract:The linewidth of distributed feedback (DFB) semiconductor lasers is usually too wide to meet the requirement of fiber-optic sensing. According to the linewidth theory of semiconductor lasers proposed by C. H. Henry in 1982, reduced linewidth can be obtained with proper design of key parameters of a DFB laser, such as cavity length, coupling coefficient, differential gain and optical confinement factor. Meanwhile, spatial-hole-burning is also detrimental to linewidth-narrowing, and special care must be paid to grating structure design to achieve narrow linewidth. By taking the above issues into consideration, DFB semiconductor lasers with a linewidth of 10-kHz have been demonstrated. In addition, ultra-narrow linewidth can be also realized by adopting DBR structure or external cavity structure.
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