Abstract:Quaternary semiconductor Cu2ZnSnSe4 (CZTSe) is a very promising alternative to semiconductors based on indium (In) and gallium (Ga) as solar absorber material due to its direct band gap, inherent high absorption coefficient (>104 cm−1) and abundance of cheap elements zinc (Zn) and tin (Sn). In this study, high quality CZTSe thin films were successfully synthesized by a green and low-cost solution based non-vacuum method, which involves spin coating non-toxic solvent-based CZTSe nano-inks onto Mo coated soda lime glass substrates followed by selenization with elemental Se vapor. The effect of selenization temperature on structural, morphological, compositional and optical properties of CZTSe films are investigated using X-ray diffraction (XRD), Raman spectroscopy, scanning electron microscopy (SEM), energy dispersive spectroscopy (EDS) and photoluminescence spectroscopy. XRD and Raman analysis indicates that a tetragonal stannite-type structured CZTSe is formed. Depend on the selenization temperature, the dense and compact films with grain sizes from 200 nm (500 °C) up to about 1 μm (580 °C) are obtained. EDS measurement indicates that the composition ratios of the prepared CZTSe films are copper-poor and zinc-rich nature. The CZTSe films are p-type conductivity confirmed by a hot point probe method. Photoluminescence spectrum shows slightly asymmetric narrow bands with a maximum of intensity at 0.92 eV. The dependence of the photoluminescence on the excitation temperature reveals a decrease in the intensity of the photoluminescence bands. An absorption coefficient exceeding 104 cm−1 and the band gap energy about 0.87 eV of the studied films are determined by an absorption spectroscopy.

Nanoparticle Based Preparation Method of Cu_2ZnSn(SSe)_4 Thin Films

The Preparation of Cu2ZnSnSe4 Films by Selenization of the Oxide Precursors

Study on the Optimization of Cu-Zn-Sn-O to Prepare Cu2ZnSnS4 Thin Film via a Nano Ink Coating Method

Fabrication of Cu 2 ZnSnS 4 thin films using oxides nanoparticles ink for solar cell

Preparation and characterization of Cu2ZnSnSe4 thin films by selenization of electrodeposited metal precursors

Using Cu–Zn–Sn–O Precursor to Optimize CZTSSe Thin Films Fabricated by Se Doping With CZTS Thin Films

Synthesis and Characterization of Cu 2 ZnSnS 4 from Cu 2 SnS 3 and ZnS Compounds

Fabrication of Cu 2 ZnSnS 4 absorber layers with adjustable Zn/Sn and Cu/Zn+Sn ratios

Synthesis of CZTS nano powder materials and performance characterization

Cu2ZnSnS4 Thin Film Fabricated by the Calcinated Nanocrystals

Structural and Optical Properties of the Cu2znsnse4 Thin Films Grown by Nano-Ink Coating and Selenization

A Facile and Low-Cost Synthesis of Cu2ZnSn(SxSe1−x)4 Nanocrystals with Tunable Composition and Optical Band Gap

Colloidal Cu2ZnSnS4 nanocrystals generated by a facile route using ethylxanthate molecular precursors

Low Cost Preparation of Cu2ZnSnS4 and Cu2ZnSn(SxSe1−x)4 from Binary Sulfide Nanoparticles for Solar Cell Application

Synthesis of Cu2ZnSnSe4 Nanoparticles Via Solvothermal Route

Fabrication of Cu2ZnSnS4 Thin Films Through Sulfurization of Co-Electrodeposited Cu-Zn-Sn Metallic Precursor

Synthesis of Chalcopyrite-Type Cuinse2 Nanoparticles from Aqueous Solution at Room Temperature

Fabrication of Cu2ZnSnS4 Thin Films Based on Facile Nanocrystals-Printing Approach with Rapid Thermal Annealing (RTA) Process

Synthesis and characterization of CZTS and Cu2-xAgxZnSnS4 thin films for the application of solar cells

Synthesis of High-Quality and Self-assembled Cu2ZnSnS4 Nanocrystals

Growth Of Cu2znsns4 Thin Films By Sulfurization Of Co-Sputtered Metallic Precursors