Study on nano-Si3N4/cyanate ester resin electronic encapsulating material

Qian LI,Hong-xia YAN,Qian-qian WANG,Yu-sheng TANG

DOI: https://doi.org/10.13416/j.ca.2010.12.005

2010-01-01

Abstract:A nano-Si3N4/BCE electronic encapsulating material was prepared with nano-Si3N4 surface treated by silane coupler(KH-560) as modifier of BCE,and the some properties(such as static mechanical property,dynamic mechanical property and dielectric property) of the system were investigated.The results showed that the adding nano-Si3N4 can obviously improve the impact strength and flexural strength of nano-Si3N4/BCE composites because the impact strength and flexural strength were increased from 10.1 kJ/m2 and 94.11 MPa of pure BCE to 14.58 kJ/m2 and 112.13 MPa of nano-Si3N4/BCE composites when mass fraction of nano-Si3N4 was 3%.The storage modulus of nano-Si3N4/BCE system was slightly less than that of pure BCE system at low temperature range and was slightly more than that of pure BCE system at high temperature range.The dielectric constant of nano-Si3N4/BCE system was higher than that of pure BCE system,but the dielectric loss factor of nano-Si3N4/BCE system was less than that of pure BCE system.