Abstract:Based on first‐principles calculations and nonequilibrium Green's function simulations of CrX2N4 based field‐effect transistors (FETs) with various electrodes, it is found that CrC2N4 forms an Ohmic contact with Ti electrode in the vertical direction. Furthermore, the strong Fermi level pinning effects restrict the Schottky barrier hights of CrSi2N4 based FETs to a narrow range, therefore, quasi‐Ohmic contact or Ohmic contacts are formed. Developing Ohmic contact systems or achieving low contact resistance is significant for high‐performance semiconductor devices. This work comprehensively investigates the interfacial properties of CrX2N4 (X = C, Si) based field‐effect transistors (FETs) with different metal (Ag, Au, Cu, Ni, Pd, Pt, Ti, and graphene) electrodes by using electronic structure calculations and quantum transport simulations. It is highlighted that the stronger interlayer coupling allows CrC2N4 to form an n‐type Ohmic contact with Ti electrode in the vertical direction. Furthermore, the absence of tunneling barrier at the CrC2N4–Ti interface greatly improves the electron injection efficiency. On the other hand, the studied metals form Schottky contact with CrC2N4 at the lateral interface due to Fermi level pinning (FLP) effects. Surprisingly, the strong FLP effects restrict the Schottky barrier heights of CrSi2N4‐metal contacts to a narrow range. Where Ag, Au, Ni, Pd, Pt, Ti electrodes and Ag, Ti electrodes form ideal ohmic contact with CrSi2N4 in the vertical and lateral directions, respectively, while the other metals form quasi‐ohmic contact. Ti exhibits the highest contact performance as the electrode in both CrC2N4 and CrSi2N4 based FETs. The findings may provide fundamental understanding for designing high‐performance and energy‐efficient FETs based on CrX2N4.

Fabricating Ohmic Contact on Nb-Doped Srtio3 Surface in Nanoscale

Mechanical Writing of N-Type Conductive Layers on the SrTiO3 Surface in Nanoscale

Direct visualization and control of SrOx segregation on semiconducting Nb doped SrTiO3 (100) surface

Investigation of the Mechanism for Ohmic Contact Formation in Ti/Al/Ni/Au Contacts to Β-Ga2o3 Nanobelt Field-Effect Transistors.

Controllable Resistive Switching in Au/Nb:Srtio3 Microscopic Schottky Junctions

Investigation of metal contacts to Nb-1.0wt.%-doped SrTiO3

Fabrication of Ohmic Contact on the Carbon-Terminated Surface of N-Type Silicon Carbide

Efficient Ohmic Contact in Monolayer CrX2N4 (X = C, Si) Based Field‐Effect Transistors

Single Layer Control of Nanoscale Metal-Insulator Transition at the LaAlO3/SrTiO3 Interface

Fabrication of Silicon-Based Template-Assisted Nanoelectrode Arrays and Ohmic Contact Properties Investigation.

Origin of Resistance Switching and Regulation of the Resistance Stability by the Interface State Density on the Pt/Nb:SrTiO3 Interface

Improving the Electrical Contact at a Pt/TiO2nanowire Interface by Selective Application of Focused Femtosecond Laser Irradiation

Improved Thermal Oxidation Growth of Non-Flaking CuO Nanorod Arrays on Si Substrate from Cu Film and Their Nanoscale Electrical Properties for Electronic Devices

Controllable Etching-Induced Contact Enhancement for High-Performance Carbon Nanotube Thin-Film Transistors

Ti/Ni/Ti/Au Ohmic contact and Schottky transformation to Al-doped ZnO thin films

Single Layer Control of Nanoscale Metal-Insulator Transition at the LaAlO 3 /SrTiO 3 Interface

Formation Mechanism, Interface Characteristics and the Application of Metal/sic Thin-Film Ohmic Contact after High-Temperature Treatment

Mechanism Study of Low-Resistance Ohmic Contact in Cr/Au Electrodes on (100) Β-Ga2o3 Substrate with Rapid Thermal Annealing

Yttrium-induced phase-transition technology for forming perfect ohmic contact in two-dimensional MoS2 transistors

Schottky Behavior at Ag/Nb-1.0wt%-doped SrTiO3 Interface

Interface transition from Ohmic to Schottky contact in Ti3X2/MoS2 (X= B, C, N): Insights from first-principles