Abstract:The electronic structure evolutions of few-layer black phosphorus (BP) under pressure shows a wealth of phenomena, such as the nonmonotonic change of direct gap at the {\Gamma} point, the layer-number dependence, and the distinct responses to normal and hydrostatic pressures. A full and unified understanding to these rich phenomena remains lacking. Here, we provide a unified understanding from the competition between interlayer quasi-bonding (QB) interactions and intralayer chemical bonding interactions. The former decreases while the latter increases the band gap under pressure and the origin can be correlated to different combinations of inter- and intra-layer antibonding or bonding interactions at the band edges. More interestingly, the interlayer QB interactions are a coexistence of two categories of interactions, namely, the coexistence of interactions between bands of the same occupancy (occupied-occupied and empty-empty interactions) and of different occupancies (occupied-empty interaction); and, the overall effect is a four-level interaction, which explains the anomalous interlayer-antibonding feature of the conduction band edge of bilayer BP. Our current study lay the foundation for the electronic structure tuning of two-dimensional (2D) BP, and, our analysis method for multi-energy-level interactions can be applied to other 2D semiconductor homo- and hetero-structures that have occupied-empty interlayer interactions.

Influences of strains on the formation of the quasi-Dirac cone and the Landau levels in black phosphorus

Strain-tunable Lattice and Energy Gap in Bulk Black Phosphorus

Strain-induced Modulation on Phonon and Electronic Properties of Suspended Black Phosphorus Field Effect Transistor

Remarkable Anisotropic Phonon Response in Uniaxially Strained Few-Layer Black Phosphorus

Strain-Induced Gap Transition and Anisotropic Dirac-Like Cones in Monolayer and Bilayer Phosphorene

Anisotropic band evolution of bulk black phosphorus induced by the uniaxial tensile strain

Anisotropic Band Evolution of Bulk Black Phosphorus Induced by Uniaxial Tensile Strain

In-Plane Uniaxial Strain in Black Phosphorus Enables the Identification of Crystalline Orientation.

Flat Bands and Extreme Pseudomagnetic Fields in Monolayer Graphene by Topography Strain Engineering

Landau Levels and Magneto-Transport Property of Monolayer Phosphorene.

Realizing One-Dimensional Electronic States in Graphene Via Coupled Zeroth Pseudo-Landau Levels.

Straintronics in Phosphorene: Tensile vs Shear Strains and Their Combinations for Manipulating the Band Gap

Effects of out-of-plane strains and electric fields on the electronic structures of graphene/MTe (M = Al, B) heterostructures.

Dispersions and magnetism of strain-induced pseudo Landau levels in Bernal-stacked bilayer graphene

Strain-induced Enhanced Interlayer Coupling, Landau Quantizations, and Valley Polarization in Twisted Graphene Bilayer

Magnetic-field-induced electronic instability of Weyl-like fermions in compressed black phosphorus

Mechanical strain and electric field tunable electronic structure of black/violet phosphorene van der Waals heterostructure: From type I to Z-scheme system

Strain-Tunable Van Der Waals Interactions In Few-Layer Black Phosphorus

Unified understanding to the rich electronic-structure evolutions of 2D black phosphorus under pressure

Strain and pseudo-magnetic fields in optical lattices from density-assisted tunneling

High-mobility transport symmetry and effect of strain on electronic and optical properties in few-layer blue phosphorus