Abstract:The demand for high-power vertical cavity surface emitting laser (VCSEL) with multiple-emitters is dramatically growing for 3D sensing application in consumable and automotive electronics. Oxide confinement technology is favorable for 2D VCSEL arrays with the advantage of small threshold current, low manufacture cost and high power conversion efficiency. Since both current and optical light is confined by the insulating oxide layer, oxide aperture delineation will be useful for VCSEL array characterization and failure analysis. In this work, electrical and physical failure analysis techniques are utilized for oxide aperture delineation for both good and dim emitters in 2D VCSEL array chip, which has been subjected to overstress test. Three different kinds of techniques, that is, near-field testing (NFT), infrared (IR) microcopy and planar-view transmission electron microscopy (PVTEM) are used to investigate the entire oxide aperture confined region, which is the essential region for VCSEL lasing. From functional view of point, NFT emission pattern below threshold current provide emission profile from each emitter, which is related with oxide aperture confinement. From physical view of point, IR and PVTEM images provide emitter structure analysis to correlate with emission pattern. For good emitter (Emitter 1), electrical near-field testing below threshold current shows circular shape, uniform emission pattern. Non-destructive IR images and destructive planar-view TEM confirm the round-shape oxide aperture. For bad emitters (Emitter 2 and Emitter 3), NFT images below threshold show the dark spot at the emission pattern. IR images is only able to provide oxide aperture shape and reveal oxidation defect. PVTEM is able to capture both dark-line defect and further oxidation failure, which correlate with the dark spot site in NFT emission pattern. This work demonstrates the effectiveness of the three techniques for oxide aperture delineation and provide good correlation between NFT emission profile and PVTEM aperture morphology. It also can link weak emission location with physical defect site in the dim emitter. These combined techniques can work together for oxide aperture delineation and fault isolation in 2D VCSEL arrays.

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