Enhancing the Thermoelectric Performance of ZnO Epitaxial Films by Ga Doping and Thermal Tuning

Zhi-Fang Zhou,Guang-Kun Ren,Xing Tan,Rui Liu,Chan Liu,Yuan-Hua Lin,Ce-Wen Nan

DOI: https://doi.org/10.1039/c8ta06824k

IF: 11.9

2018-01-01

Journal of Materials Chemistry A

Abstract:Ga doping combined with optimization of the deposition temperature could be a promising strategy for enhancing the thermoelectric properties of ZnO-based epitaxial films.

What problem does this paper attempt to address?

Enhanced Thermoelectric Performance of ZnO-Based Thin Films via Interface Engineering

Zhifang Zhou,Yunpeng Zheng,Yueyang Yang,Wenyu Zhang,Mingchu Zou,Ce-Wen Nan,Yuan-Hua Lin

DOI: https://doi.org/10.3390/cryst12101351

IF: 2.7

2022-09-25

Crystals

Abstract:Zinc oxide (ZnO) is a potential thermoelectric material with good chemical and thermal stability as well as an excellent Seebeck coefficient. However, the extremely low carrier concentration brings poor electrical transport properties. Although Gallium (Ga) doping could increase the carrier concentration of ZnO film, its thermoelectric performance is still limited due to the deteriorated Seebeck coefficient and enhanced thermal conductivity. Interface engineering is an effective strategy to decouple electron-phonon interaction for thermoelectric materials. Thus, in this work, GZO (Ga-doped ZnO)/NAZO (Ni, Al co-doped ZnO) multilayer films were designed to further improve the thermoelectric properties of GZO films. It was found that GZO/NAZO multilayer films possessed better electrical conductivity, which was attributed to the increased carrier concentration and Hall mobility. Meanwhile, benefiting from the energy filtering that occurred at GZO/NAZO interfaces, the density of states effective mass increased, resulting in comparable Seebeck coefficient values. Ultimately, an enhanced power factor value of 313 μW m−1 K−2 was achieved in the GZO/NAZO multilayer film, which is almost 46% larger than that of GZO film. This work provides a paradigm to optimize the thermoelectric performance of oxide films and other thermoelectric systems by multilayer structure design with coherent interfaces.

materials science, multidisciplinary,crystallography
A Sandwich Structure Assisted by Defect Engineering for Higher Thermoelectric Performance in ZnO‐based Films

Zhifang Zhou,Yushuai Xu,Mingchu Zou,Chan Liu,Jinle Lan,Yuan-Hua Lin,Cewen Nan

DOI: https://doi.org/10.1111/jace.17530

IF: 4.186

2021-01-01

Journal of the American Ceramic Society

Abstract:Gallium (Ga) doping together with low dimensionality has been a promising approach to improve thermoelectric performance of zinc oxide (ZnO) materials, due to the increase of carrier concentration and suppression of phonon transport. So far, the highest power factor of Ga-doped ZnO (GZO) thin films has reached 280 mu W m(-1) K-2, which is still limited for practical applications. In this work, we have simultaneously optimized the electrical conductivity and Seebeck coefficient of GZO thin films using the combination of oxygen defects and sandwich structure (GZO-ZnO-GZO). Benefiting from energy filtering effect at the interface between GZO and ZnO layers and high oxygen vacancy concentration, the density of states (DOS) effective mass has been increased together with a relatively high carrier concentration. As a result, an improved power factor value of 434 mu W m(-1) K-2 at 623 K has been achieved, which is comparable to the best values reported for ZnO-based films. This method of combining defect engineering and sandwich structure design shows great potential in enhancing the thermoelectric performance of ZnO-based thin films or other oxide materials.
Thermoelectric figure of merit in Ga-doped [0001] ZnO nanowires

Lihong Shi,Jie Chen,Gang Zhang,Baowen Li

DOI: https://doi.org/10.1016/j.physleta.2011.12.040

IF: 2.707

2012-01-01

Physics Letters A

Abstract:By using first-principles electronic structure calculation and Boltzmann transport equation, we investigate the impact of gallium (Ga) doping on the thermoelectric property of [0001] zinc oxide nanowires (Zn1−xGaxO NWs). Our results show that the thermoelectric performance of the Zn1−xGaxO NWs is strongly dependent on the Ga contents. The maximum achievable room temperature thermoelectric figure of merit in Zn1−xGaxO NW can be increased by a factor of 2.5 at Ga content of 0.04, compared with the ZT of pure ZnO NWs. This may open up ZnO NW arrays applications in possible thermoelectric energy generator and cooler.
Gallium-Doped Zinc Oxide Nanostructures for Tunable Transparent Thermoelectric Films

Xizu Wang,Xiaohu Huang,Zicong Marvin Wong,Ady Suwardi,Yun Zheng,Fengxia Wei,Shijie Wang,Teck Leong Tan,Gang Wu,Qiang Zhu,Hendrix Tanoto,Kian Soo Ong,Shuo-Wang Yang,Alex Qingyu Yan,Jianwei Xu

DOI: https://doi.org/10.1021/acsanm.2c02159

IF: 6.14

2022-06-15

ACS Applied Nano Materials

Abstract:Ga-doped ZnO (GZO) transparent nanostructured thin films were fabricated via the magnetron sputtering process, and the effect of the Ga doping level in Ga x Zn1–x O on their thermoelectric performance was investigated. Nanostructured composite Ga0.085Zn0.915O could achieve a power factor up to 1428 μW/mK2 at 850 K, which is one of the highest among the reported thin-film GZO and other metal oxides-based thermoelectrics. A corresponding thermoelectric generator module using GZO as n-type legs was fabricated to attain a maximum power output of 230 nW at ΔT = 138 K with an estimated power density of 19.1 mW cm–2. First-principles calculations were performed to study the thermoelectric properties of GZO, showing that the calculated result is perfectly consistent with the experimental observation that the maximum power factor was achieved at around 8.5% Ga doping. In addtion, 10 nanostructured gallium-doped ZnO thin-film legs were fabricated for transparent thermoelectric modules. This work provides an excellent example to foresee the thermoelectric nanostructured thin-film material property through the theoretical simulation of materials, suggesting that modeling plays a big role in designing and formulating high-performance thermoelectric materials.

materials science, multidisciplinary,nanoscience & nanotechnology
Enhanced Thermoelectric Performance In Graphitic Zno (0001) Nanofilms

yanli li,zheyong fan,jincheng zheng

DOI: https://doi.org/10.1063/1.4792469

IF: 2.877

2013-01-01

Journal of Applied Physics

Abstract:We investigate the thermoelectric properties of ultrathin graphitic ZnO (0001) nanofilms based on first-principles calculations and Boltzmann transport theory. Staircase-like densities of states induced by quantum confinement in the nanofilms give rise to improved Seebeck coefficients and electrical conductivities. The optimized figure of merit for the single-layer graphitic ZnO (0001) nanofilm is estimated to be 0.6 at 300 K, which is about 120 times larger than that of bulk ZnO (0.005). Our results suggest that the graphitic ZnO (0001) nanofilms can be designed for high performance thermoelectric applications. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4792469]
Achieving High Thermoelectric Performance in ZnSe-Doped CuGaTe2 by Optimizing the Carrier Concentration and Reducing Thermal Conductivity

Sitong Luo,Zipei Zhang,Lu Yu,Sitong Wei,Zhen Ji,Jingxuan Liang,Zhibo Wei,Weiyu Song,Shuqi Zheng

DOI: https://doi.org/10.1021/acsami.4c00455

2024-04-03

Abstract:The CuGaTe2 thermoelectric material has garnered widespread attention as an inexpensive and nontoxic material for mid-temperature thermoelectric applications. However, its development has been hindered by its low intrinsic carrier concentration and high thermal conductivity. This study investigates the band structure and thermoelectric properties of (CuGaTe2)1-x (ZnSe)x (x = 0, 0.25%, 0.5%, 1%, 1.5%, and 2%). The research revealed that the incorporation of Zn and Se atoms enhanced the level of band degeneracy and electron density of states near Fermi level, significantly raising carrier concentration through the formation of ZnGa- point defects. Simultaneously, when the doping content reached 1.5%, the ZnTe second phase emerged, collaborating with point defects and high-density dislocations, effectively scattering phonons and substantially reducing lattice thermal conductivity. Therefore, introducing ZnSe can simultaneously optimize the material's electrical and thermal transport properties. The (CuGaTe2)0.985(ZnSe)0.015 sample reaches peak ZT of 1.32 at 823 K, representing a 159% increase compared to pure CuGaTe2.
Enhanced thermoelectric properties of ZnO: C doping and band gap tuning

Yin Wu,Dai-Bing Zhang,Zhao Zhao,Jun Pei,Bo-Ping Zhang

DOI: https://doi.org/10.1016/j.jeurceramsoc.2020.09.042

IF: 5.7

2021-02-01

Journal of the European Ceramic Society

Abstract:ZnO is a promising high-temperature thermoelectric material because of its non-toxicity and low-cost. However, the wide band gap and low electrical conductivity lead to inferior thermoelectric properties. Herein, C-doping in ZnO bulk was achieved by the pyrolysis of hydrothermal surfactant TEA through a facile and speedy SPS technique. DFT calculation and experimental results show that C was incorporated into the O-site in ZnO, which reduces band gap and increases carrier concentration, thereby improving electrical conductivity and power factor. Meanwhile, the additional point defects introduced by the substitution of C/O atoms strengthen phonon scattering and decrease thermal conductivity. Benefiting from C-doping via not only tuning the electrical transport properties but also reducing the thermal conductivity, a peak ZT value of 0.024 at 773 K was achieved for Zn(O,C) bulk. It indicates that C-doping in ZnO is an effective and convenient strategy to improve thermoelectric performance.

materials science, ceramics
High Thermoelectric Performance of High‐mobility Ga‐doped ZnO Films Via Homogenous Interface Design

Zhifang Zhou,Mingchu Zou,Yushuai Xu,Jinle Lan,Chan Liu,Abid Ahmad,Yuan-Hua Lin,Ce-Wen Nan

DOI: https://doi.org/10.1111/jace.17789

IF: 4.186

2021-01-01

Journal of the American Ceramic Society

Abstract:Ga-doped ZnO (GZO) thin films grown on sapphire substrates have been widely investigated as a promising transparent thermoelectric (TE) material. However, due to the large lattice mismatch and thermal expansion between the sapphire substrate and GZO film, strain-induced lattice distortion impedes the transport of electrons, leading to low carrier mobility. In this study, ZnO homo-buffer layers with different thicknesses were inserted between sapphire substrates and GZO films, and their effect on the TE properties was investigated. A thin ZnO interlayer (10 nm) effectively reduced the lattice mismatch of the GZO film and improved the carrier mobility, which contributed to the large enhancement in the electrical conductivity. Simultaneously, energy filtering occurred at the interface between GZO and ZnO, resulting in a relatively high density of states (DOS) effective mass and maintaining a high Seebeck coefficient compared to that of the unbuffered GZO films. Consequently, the GZO film with a 10 nm thick ZnO buffer layer possessed a high power factor value of 449 mu W m(-1) K-2 at 623 K. This study provides a facile and effective method for optimizing the TE performance of oxide thin films by synergistically improving their carrier mobility and enhancing their effective mass.
Augmented near-room-temperature power factor of homogenously grown thermoelectric ZnO films

Zhifang Zhou,Yunpeng Zheng,Yueyang Yang,Chang Liu,Bin Wei,Wenyu Zhang,Jin-Le Lan,Ce-Wen Nan,Yuan-Hua Lin

DOI: https://doi.org/10.1063/5.0187427

IF: 4

2024-01-01

Applied Physics Letters

Abstract:Future applications in power generation for wearable and portable electronics or active cooling for chips will benefit from near-room-temperature thermoelectric performance enhancement. Ga-doped ZnO (GZO) thin films are potential thermoelectric materials as they have the advantages of high cost-effectiveness, low toxicity, excellent stability, and high optical transparency. Inserting a ZnO buffer layer between the sapphire substrate and GZO thin films could contribute to optimizing carrier mobility and further improving electrical transport properties. However, thermoelectric performance at near-room-temperature ranges still needs to be promoted for practical applications. In this present study, ZnO single-crystal slices were directly selected as substrates for homogenously growing GZO thin films to further modify the substrate–film interface. The high Hall mobility of 47 cm2 V−1 s−1 and weighted mobility of 75 cm2 V−1 s−1 could be realized, resulting in better electrical transport performance. Consequently, the homogenously grown GZO thin films possessed competitively prominent power factor values of 333 μW m−1 K−2 at 300 K and 391 μW m−1 K−2 at 373 K. This work offers an effective avenue for optimizing the thermoelectric properties of oxide-based thin films via homogenous growth.

physics, applied
Optimization of the thermoelectric performance of α-MgAgSb-based materials by Zn-doping

Ting Zhang,Baokun Dong,Xuan Wang

DOI: https://doi.org/10.1007/s10853-021-06171-y

IF: 4.5

2021-05-19

Journal of Materials Science

Abstract:Recently, α-MgAgSb-based materials have proved to be a kind of potential thermoelectric materials around room temperature. Here, a series of Zn-doped α-MgAgSb have been successfully synthesized by high-temperature milting and spark plasma sintering combined with annealing. Effect of Zn-doping on the microstructure and thermoelectric performance of α-MgAgSb has been investigated. Results show that Zn-doping can enhance the crystallization and carrier concentration, resulting in an increased electrical performance. Simultaneously, multiscales of nanodots, defects, grain boundaries and impurities have been introduced to reduce the lattice thermal performance. Finally, both the optimized electrical and thermal properties significantly promote the thermoelectric performance. A peak ZT of 1.29 has achieved for Mg0.985Zn0.015Ag0.97Sb0.99 at 550 K, about 18% higher than MgAg0.97Sb0.99, which indicates that Zn-doping into Mg-site is beneficial to optimize the performance of α-MgAgSb-based thermoelectric materials.

materials science, multidisciplinary
Optimized Weighted Mobility Induced High Thermoelectric Performance of ZnO‐based Multilayered Thin Films

Zhifang Zhou,Yunpeng Zheng,Yueyang Yang,Wenyu Zhang,Bin Wei,Mingchu Zou,Jinle Lan,Ce-Wen Nan,Yuan-Hua Lin

DOI: https://doi.org/10.1111/jace.18950

IF: 4.186

2022-01-01

Journal of the American Ceramic Society

Abstract:As a transparent thermoelectric oxide, gallium-doped zinc oxide (GZO) has the potential to power wearable or portable electronics and may be used in the integrated circuits industry for chip cooling. Constructing ZnO-GZO interfaces has been proposed as an effective strategy for improving thermoelectric performance of GZO thin films. However, without the aid of band structure calculation for multilayered films, it is hard to directly elucidate the underlying mechanisms of carrier transport. Weighted mobility is an indicator that reveals the inherent electronic transport properties like carrier scattering, electronic band structure, and so on. Thus, to further investigate the effects of ZnO-GZO interfaces on electrical properties of GZO thin films, the structures containing different numbers of ZnO-GZO interfaces were designed and the correlations among numbers of ZnO-GZO interfaces, weighted mobility, and electrical properties were explored. It was found that with more ZnO-GZO interfaces, the weighted mobility increased, and the power factor values also improved as well. Consequently, an enhanced power factor value reached 439 mu W m(-1) K-2 at 623 K. This work demonstrated the beneficial effects of multiple interfaces on the improvements of electrical transport performance through analyzing weighted mobility, which laid a foundation for further optimization of thermoelectric performance.
Extraordinary role of Zn in enhancing thermoelectric performance of Ga-doped n-type PbTe

Zhong-Zhen Luo,Songting Cai,Shiqiang Hao,Trevor P. Bailey,Yubo Luo,Wenjun Luo,Yan Yu,Ctirad Uher,Christopher Wolverton,Vinayak P. Dravid,Zhigang Zou,Qingyu Yan,Mercouri G. Kanatzidis

DOI: https://doi.org/10.1039/d1ee02986j

2022-01-01

Abstract:The discordant Zn and Ga atoms raise the carrier concentration and soften phonon modes, resulting in superior performance nanostructured n-type PbTe.

energy & fuels,chemistry, multidisciplinary,engineering, chemical,environmental sciences
Improvement mechanism of thermoelectric properties of ZnO ceramics by energy band regulation

Jianbao Yang,Hong Zhao,Xinyu Luo,Xinqi She,Quanlong An,Yixin Peng,Guoji Cai,Yi Liu,Yong Tang,Bo Feng

DOI: https://doi.org/10.1016/j.ceramint.2023.09.251

IF: 5.532

2023-09-01

Ceramics International

Abstract:ZnO based thermoelectric material is one of the most promising thermoelectric materials in the high temperature zone at present. Since its thermoelectric performances are closely related to the electronic band structure, energy band regulation was adopted through doping and composition optimization in order to improve its thermoelectric conversion efficiency. By introducing tetravalent Si elements at Zn sites of the ZnO matrix, the bandgap has been effectively reduced and the synergistic optimization of various thermoelectric parameters is achieved. The hybridization of the s - and p - orbitals of Zn atoms, the p - orbitals of O atoms, and the p - orbitals of Si atoms were introduced, and correspondingly increase the density of states near the Fermi level, increase the carrier concentration and electrical conductivity, and reduce the Seebeck coefficient. Due to the scattering of heteroatoms, the thermal conductivity decreases. Combined with the increase in power factor and the decrease in thermal conductivity, the ZT values obtained an effective improvement, reaching a maximum of ∼0.408 at 873 K, which is as ∼4.12 times that of the ZnO sample. The method exhibits simple process, and is conducive to batch production and low-cost preparation of high-performance thermoelectric materials, which is of great significance for expanding the application fields of ZnO based thermoelectric materials.

materials science, ceramics
Optimization of Thermoelectric Transport Performance of Nickel-Doped CuGaTe2

Huang Lu-Lu,Zhang Jian,Kong Yuan,Li Di,Xin Hong-Xing,Qin Xiao-Ping

DOI: https://doi.org/10.7498/aps.70.20211165

2021-01-01

Abstract:Thermoelectric material is a new type of functional material that can realize the direct conversion between heat energy and electric energy. It has received a lot of attention because it has wide practical applications. However, the applications of thermoelectric devices are limited by their low conversion efficiencies. The conversion efficiency is determined mainly by the thermoelectric properties of the material. In this work, a compound of CuGaTe2 chalcopyrite is selected as a research object, and a series of Ni-doped samples Cu1–xNixGaTe2 (x = 0–0.75%) is synthesized by the vacuum melting method. The temperature dependent thermal and electrical properties for Cu1–xNixGaTe2 (x = 0–0.75%) compounds are investigated. The results show that the Ni atom can effectively replace the Cu atom of the material, and thus leading the carrier concentration to decrease slightly and inducing the mobility to increase. At the same time, the Seebeck coefficient increases significantly after Ni doping: on the one hand, the increase is due to the decrease of the carrier concentration of the sample; on the other hand, the effective increase of the density of states near the Fermi level plays an important role in increasing Seebeck coefficient. Then, the thermal conductivity decreases effectively due to the enhancement of point defect scattering caused by Ni doping, and the minimum lattice thermal conductivity is reduced by ~30% in comparison with the matrix lattice thermal conductivity. Finally, the maximum ZT value for Cu0.095Ni0.005GaTe2 sample (ZT = 1.26 at 873 K) is obtained to be ~56% larger than that for CuGaTe2. This work indicates that the doping magnetic element Ni at Cu site is also one of the effective ways to improve the thermoelectric properties of CuGaTe2 materials.
Enhancement of Thermoelectric Performance in Robust ZnO‐Based Composite Ceramics Driven by A Stepwise Optimization Strategy

Dianzhen Wang,Yuqi Gao,Cun You,Jiaen Cheng,Zeben Liu,Yuhan Qiang,Min Lian,Xiaoci Ma,Yufei Ge,Yanli Chen,Qiang Tao,Pinwen Zhu

DOI: https://doi.org/10.1002/adfm.202308970

IF: 19

2023-10-04

Advanced Functional Materials

Abstract:The stepwise optimization strategy composed of carrier concentration optimization and carrier filtering effect demonstrates a determinant role in synergistically optimizing the electron and phonon transport properties to achieve a large power factor and ultralow thermal conductivity simultaneously, finally resulting in a significantly enhanced thermoelectric performance in ZnO‐based composite ceramics. ZnO is a promising high‐temperature thermoelectric (TE) material due to its superior stability and earth abundance. However, the coupling relation between Seebeck coefficient and electrical conductivity on carrier concentration limits the optimum TE performance for most TE materials, especially ZnO. Herein, enhancement of TE performance is achieved via a stepwise optimization strategy composed of carrier concentration optimization and carrier filtering effect for fabricating robust ZnO‐based composite ceramics through a self‐developed specific high‐pressure synthesis followed by spark plasma sintering. Specifically, doping SnO2 provide substantial electrons to surge the carrier concentration. The subsequent compositing Si3N4 nanoparticles results in the unique reaction‐generated Zn2SiO4 nanoprecipitates with a larger bandgap and intrinsically low thermal conductivity, which introduce an excellent carrier filtering effect to increase the Seebeck coefficient by 57.7% at 300 K without compromising electrical conductivity much and enhance phonon scattering to cause an ultralow lattice thermal conductivity of 1.39 W m−1 K−1 achieving amorphous limits of ZnO (1.4±0.1 W m−1 K−1). Consequently, a high peak ZT (figure of merit) of 0.691 at 873 K is obtained, which is higher than that of previously reported ZnO‐based TE materials. This work demonstrates a feasible and effective strategy to fabricate high‐performance TE materials, especially those with inferior electrical conductivity.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
Realizing High Thermoelectric Performance in the ZnTe-Alloyed CuGaTe 2 through Band Engineering

Zipei Zhang,Shuqi Zheng,Juan Li,Boyi Wang,Luo Yue,Yue Wu,Ximeng Dong,Liqiang Chen,Lei Gao,Guiwu Lu

DOI: https://doi.org/10.1021/acsaem.0c02386

IF: 6.4

2020-12-02

ACS Applied Energy Materials

Abstract:Recent years have witnessed the chalcopyrite compound CuGaTe2 receiving widespread attention as a promising thermoelectric material. In the work, we calculated the band structure of Zn substitution at the Ga site and found that the Zn element can effectively adjust the band degeneracy and tetragonal distortion parameters of CuGaTe2. By doping CuGaTe2 with different contents of ZnTe, it is discovered that the ZnGa– point defects formed by CuGaTe2–ZnTe concrete solutions can increase the carrier concentration of CuGaTe2 material significantly. Meanwhile, it strongly scatters the short-wavelength phonons and reduces the lattice thermal conductivity. Therefore, the electrical and thermal properties of the material are effectively improved. The ZT value of (CuGaTe2)0.9975(2ZnTe)0.0025 reaches 0.74 at 810 K, which is nearly 28% higher than the 0.58 of the undoped CuGaTe2 sample.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acsaem.0c02386?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acsaem.0c02386</a>.Figure S1 (<a class="ext-link" href="/doi/suppl/10.1021/acsaem.0c02386/suppl_file/ae0c02386_si_001.pdf">PDF</a>)Figure S2 (<a class="ext-link" href="/doi/suppl/10.1021/acsaem.0c02386/suppl_file/ae0c02386_si_002.pdf">PDF</a>)Lattice parameters and tetragonal distortion parameter η for Cu16Ga16–xZnxTe32; lattice parameters for (CuGaTe2)1–x(2ZnTe)x solid solution; and the calculation formula of formation energy (<a class="ext-link" href="/doi/suppl/10.1021/acsaem.0c02386/suppl_file/ae0c02386_si_003.pdf">PDF</a>)This article has not yet been cited by other publications.

materials science, multidisciplinary,chemistry, physical,energy & fuels
Enhancing Thermoelectric Performance Via Synergistic Regulation of Band Structure and Microstructure in Cu-doped WS2 Polycrystalline Films

Nan Xin,Yifei Li,Guihua Tang,Tian Lan,Jimin Xu,Xin Zhao,Min Zhang,Yinan Nie,Hao Shen

DOI: https://doi.org/10.1016/j.cej.2024.155454

IF: 15.1

2024-01-01

Chemical Engineering Journal

Abstract:Thermoelectric materials have great potential in the energy recovery and environmental protection, and thermoelectric films can also effectively achieve heat dissipation of the chip through thermoelectric refrigeration. WS2 films show good thermoelectric performance in prediction, but the figure of merit (ZT) of the synthesized WS2 films still needs improvement. In this work, Cu was doped into WS2 films by magnetron sputtering combined with chemical vapor deposition and sulfurization annealing. Cu doping narrowed the band gap and increased the hole concentration from 5.6 x 10(19) cm(-3) to 2.2 x 10(21) cm(-3), greatly improved the electrical properties of WS2 film. At 300 K, the electrical conductivity and power factor of Cu-doped films increased by 1086 % and 575 % compared to pristine WS2, respectively. In addition, Cu doping reduced the grain size and introduced more grain boundaries, which decreased the in-plane thermal conductivity to as low as 0.22 W m(-1) K-1 at 300 K. The coupling of the electrical and thermal properties optimization greatly improved ZT. The ZT value of Cu-5.5-WS2 films is as high as 0.181 at 425 K. This work provides a new idea for improving the thermoelectric performance of transition metal dichalcogenides (TMDCs) films.
Study on the mechanism of influence of impurity levels introduced by doping high-valence element on the properties of zinc oxide thermoelectric materials

Xiaoqiong Zuo,Xinqi She,Zhibin Wang,Rong Zhang,Yonghong Chen,ZhiPeng Zheng,Bo Feng

DOI: https://doi.org/10.1007/s10854-024-12878-w

2024-06-10

Journal of Materials Science Materials in Electronics

Abstract:Herein, the design, preparation, and characterization of zinc oxide thermoelectric materials and the mechanism of energy conversion efficiency improvement were systematically and deeply explored. Through the detailed analysis of a series of experimental data and the construction of theoretical models, the following mechanism is revealed. By introducing W element to dope at Zn sites of ZnO with significantly improved thermoelectric properties, it can not only increase the electron state density near the Fermi level, increase the carrier concentration, effectively improve the tradeoff relationship between the material's conductivity and Seebeck coefficient, improve the power factor, but also strengthen phonon scattering and reduce Young's modulus. Thus, the lattice thermal conductivity is significantly reduced, and the overall thermoelectric conversion efficiency is further improved. The experimental results show that the ZT value with the highest value reaching ~ 0.379 for W-doped ZnO-based thermoelectric material is about ~ 3.9 times higher than that of traditional materials at a specific operating temperature, showing great potential for performance optimization.

materials science, multidisciplinary,engineering, electrical & electronic,physics, applied, condensed matter
High-quality ZnO Growth, Doping, and Polarization Effect

Kun Tang,Shulin Gu,Jiandong Ye,Shunming Zhu,Rong Zhang,Yi Zheng

DOI: https://doi.org/10.1088/1674-4926/37/3/031001

2016-01-01

Abstract:The authors have reported their recent progress in the research field of ZnO materials as well as the corresponding global advance. Recent results regarding(1) the development of high-quality epitaxy techniques,(2) the defect physics and the Te/N co-doping mechanism for p-type conduction, and(3) the design, realization,and properties of the ZnMgO/ZnO hetero-structures have been shown and discussed. A complete technology of the growth of high-quality ZnO epi-films and nano-crystals has been developed. The co-doping of N plus an isovalent element to oxygen has been found to be the most hopeful path to overcome the notorious p-type hurdle. High mobility electrons have been observed in low-dimensional structures utilizing the polarization of ZnMgO and ZnO.Very different properties as well as new physics of the electrons in 2DEG and 3DES have been found as compared to the electrons in the bulk.
Zinc Doping Induces Enhanced Thermoelectric Performance of Solvothermal SnTe

Lijun Wang,Xiao-Lei Shi,Lvzhou Li,Min Hong,Bencai Lin,Pengcheng Miao,Jianning Ding,Ningyi Yuan,Shuqi Zheng,Zhi-Gang Chen

DOI: https://doi.org/10.1002/asia.202400130

2024-02-22

Chemistry - An Asian Journal

Abstract:The creation of hierarchical nanostructures can effectively strengthen phonon scattering to reduce lattice thermal conductivity for improving thermoelectric properties in inorganic solids. Here, we use Zn doping to induce a remarkable reduction in the lattice thermal conductivity in SnTe, approaching the theoretical minimum limit. Microstructure analysis reveals that ZnTe nanoprecipitates can embed within SnTe grains beyond the solubility limit of Zn in the Zn alloyed SnTe. These nanoprecipitates result in a substantial decrease of the lattice thermal conductivity in SnTe, leading to an ultralow lattice thermal conductivity of 0.50 W m−1 K−1 at 773 K and a peak ZT of ~0.48 at 773 K, marking an approximately 45% enhancement compared to pristine SnTe. This study underscores the effectiveness of incorporating ZnTe nanoprecipitates in boosting the thermoelectric performance of SnTe‐based materials.

chemistry, multidisciplinary

Enhancing the Thermoelectric Performance of ZnO Epitaxial Films by Ga Doping and Thermal Tuning

Enhanced Thermoelectric Performance of ZnO-Based Thin Films via Interface Engineering

A Sandwich Structure Assisted by Defect Engineering for Higher Thermoelectric Performance in ZnO‐based Films

Thermoelectric figure of merit in Ga-doped [0001] ZnO nanowires

Gallium-Doped Zinc Oxide Nanostructures for Tunable Transparent Thermoelectric Films

Enhanced Thermoelectric Performance In Graphitic Zno (0001) Nanofilms

Achieving High Thermoelectric Performance in ZnSe-Doped CuGaTe2 by Optimizing the Carrier Concentration and Reducing Thermal Conductivity

Enhanced thermoelectric properties of ZnO: C doping and band gap tuning

High Thermoelectric Performance of High‐mobility Ga‐doped ZnO Films Via Homogenous Interface Design

Augmented near-room-temperature power factor of homogenously grown thermoelectric ZnO films

Optimization of the thermoelectric performance of α-MgAgSb-based materials by Zn-doping

Optimized Weighted Mobility Induced High Thermoelectric Performance of ZnO‐based Multilayered Thin Films

Extraordinary role of Zn in enhancing thermoelectric performance of Ga-doped n-type PbTe

Improvement mechanism of thermoelectric properties of ZnO ceramics by energy band regulation

Optimization of Thermoelectric Transport Performance of Nickel-Doped CuGaTe2

Enhancement of Thermoelectric Performance in Robust ZnO‐Based Composite Ceramics Driven by A Stepwise Optimization Strategy

Realizing High Thermoelectric Performance in the ZnTe-Alloyed CuGaTe 2 through Band Engineering

Enhancing Thermoelectric Performance Via Synergistic Regulation of Band Structure and Microstructure in Cu-doped WS2 Polycrystalline Films

Study on the mechanism of influence of impurity levels introduced by doping high-valence element on the properties of zinc oxide thermoelectric materials

High-quality ZnO Growth, Doping, and Polarization Effect

Zinc Doping Induces Enhanced Thermoelectric Performance of Solvothermal SnTe