Augmented near-room-temperature power factor of homogenously grown thermoelectric ZnO films

Zhifang Zhou,Yunpeng Zheng,Yueyang Yang,Chang Liu,Bin Wei,Wenyu Zhang,Jin-Le Lan,Ce-Wen Nan,Yuan-Hua Lin
DOI: https://doi.org/10.1063/5.0187427
IF: 4
2024-01-01
Applied Physics Letters
Abstract:Future applications in power generation for wearable and portable electronics or active cooling for chips will benefit from near-room-temperature thermoelectric performance enhancement. Ga-doped ZnO (GZO) thin films are potential thermoelectric materials as they have the advantages of high cost-effectiveness, low toxicity, excellent stability, and high optical transparency. Inserting a ZnO buffer layer between the sapphire substrate and GZO thin films could contribute to optimizing carrier mobility and further improving electrical transport properties. However, thermoelectric performance at near-room-temperature ranges still needs to be promoted for practical applications. In this present study, ZnO single-crystal slices were directly selected as substrates for homogenously growing GZO thin films to further modify the substrate–film interface. The high Hall mobility of 47 cm2 V−1 s−1 and weighted mobility of 75 cm2 V−1 s−1 could be realized, resulting in better electrical transport performance. Consequently, the homogenously grown GZO thin films possessed competitively prominent power factor values of 333 μW m−1 K−2 at 300 K and 391 μW m−1 K−2 at 373 K. This work offers an effective avenue for optimizing the thermoelectric properties of oxide-based thin films via homogenous growth.
physics, applied
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