Abstract:This paper presents a radiation degradation study on 4-Transistor (4T) complementary metal-oxide-semiconductor (CMOS) image sensors designed in standard 0.18-μm technology. The significant contribution of this paper is a systematic evaluation of the X-ray radiation effects on image sensors from the individual device level, to the pixel level and to the level of the entire sensor. The major degradation parameters of the sensor have been analyzed. This paper also includes test structures of varying geometries of in-pixel MOSFETs, pinned photodiodes (PPD), and transfer gates (TG). Characterization was performed during different X-ray doses up to 109 krad. The major degradation-an increase in the dark signal-is analyzed by modifying the TG charge transfer time and integration time. The PPD and the TG are the elements most sensitive to the dark signal of the sensor. The radiation-related dimensional effects on the sensors are also evaluated, which show different results compared to 3T pixels. The transfer-gate length influences the dark signal due to not only the electric field variation in the TG channel but also the local defect generations. In-pixel MOSFETs are used to identify the origin of increases in radiation-induced dark signal. Shallow trench isolation (STI) oxides are responsible for the radiation degradation of the sensor. A slight degradation of the quantum efficiency was observed after radiation in the short-wavelength region. Basic hardening-by-design techniques are also presented. The discussion results of the radiation-related dimensional effects on the sensors together with the STI effect can be used as a guideline for future layout designs of radiation-tolerant sensors. Identifying the pixel dark current origin can help to determine where and how to suppress the pixel dark current generation more effectively.

Time-dependent crosstalk effects for image sensors with different isolation structures

Characterization and analysis of electrical crosstalk in a linear array of CMOS image sensors

Structure Optimization For Utbb Based Image Sensor To Suppress Crosstalk

High crosstalk suppression in InGaAs/InP single-photon avalanche diode arrays by carrier extraction structure

Suppressing crosstalk in the photoelectron <i>in</i>-<i>situ</i> sensing device (PISD) by double SOI

Temporal and Spatial Distribution Characteristics of Crosstalk Lines Generated by Irradiating Progressive Scan Charge-Coupled Device Camera with Continuous Laser

A Study on the Timing Sensitivity of the Transient Dose Rate Effect on Complementary Metal-Oxide-Semiconductor Image Sensor Readout Circuits

Crosstalk Analysis of SiC Ultraviolet Single Photon Avalanche Photodiode Arrays

Optical crosstalk photon penetration depth in Silicon Photomultipliers

Spatial optical crosstalk in CMOS image sensors integrated with plasmonic color filters

Leakage Current Non-Uniformity and Random Telegraph Signals in CMOS Image Sensor Floating Diffusions Used for In-Pixel Charge Storage

A novel measurement method for SiPM external crosstalk probability at low temperature

A study on the shielding mechanisms of SOI pixel detector

Radiation-Induced Dose and Single Event Effects in Digital CMOS Image Sensors

The Effect of Pixel Design and Operation Conditions on Linear Output Range of 4T CMOS Image Sensors

Effect of proton radiation on 8T CMOS image sensors for space applications

Analyzing the Radiation Degradation of 4-Transistor Deep Submicron Technology CMOS Image Sensors

Heavy Ion Irradiation Induced Single Particle Displacement Damage in 8T Global Shutter CMOS Image Sensor

Investigation on Improving Color Crosstalk for High-Transmittance TFT-LCDs

Characterization of pixel crosstalk and impact of Bayer patterning by quantum efficiency measurement