Abstract:Finite element simulation model of a GaN‐LED operating in noncarrier injection mode is established. It is found that the luminescence output of the NCI‐LED is highly sensitive to doping concentrations, and reducing the multiquantum wells number can increase the probability of interband tunneling so as to improve the luminescence intensity. The highest luminescence intensity occurs in the device with a single quantum well. Noncarrier injection (NCI) operation mode is an emerging driving mode for nanoscale light‐emitting diodes (LEDs) for application in nanopixel light‐emitting displays. However, the luminescence intensity of the NCI‐LED with traditional epitaxial structure is relatively low because of the absence of external carrier injection. Therefore, improving the luminescence intensity by optimizing the epitaxial structure of the LED is an important technical measure. In this work, the tunneling behavior of the NCI‐LED under reverse bias, which plays a key role in increasing the luminescence intensity, is studied through modeling and simulation. The dynamic variation of carrier concentration in each voltage cycle is studied to explore the working process of the NCI‐LED. Results show that the luminescence output of the NCI‐LED is highly sensitive to doping concentrations, and reducing the number of multiquantum wells can increase the probability of interband tunneling so as to improve dramatically the carrier number contributing to luminescence. This simulation work can deepen the understanding of the NCI mode and serve as an important guidance for the rational design of the NCI‐LEDs.

Improved Carrier Injection and Confinement in InGaN Light-Emitting Diodes Containing GaN/AlGaN/GaN Triangular Barriers

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Performance Enhancement of Ingan-Based Light-Emitting Diodes with Ingan/Alinn/Ingan Composition-Graded Barriers

Enhancing the Performance of GaN-Based Light-Emitting Diodes by Incorporating a Junction-Type Last Quantum Barrier

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Improved carrier transport and photoelectric properties of InGaN/GaN multiple quantum wells with wider well and narrower barrier

Performance Improvement of InGaN Red Light‐Emitting Diode by Using V‐Pits Layer and Step‐Graded GaN Barrier

Numerical Investigation on the Performance Enhancement of InGaN/GaN Light‐Emitting Diodes with a Novel p‐i‐n Electron‐Blocking Layer

Performance Improvement of InGaN LEDs by Using Strain Compensated Last Quantum Barrier and Electron Blocking Layer

High Performance of AlGaN Deep-Ultraviolet Light Emitting Diodes Due to Improved Vertical Carrier Transport by Delta-Accelerating Quantum Barriers

An Improved Carrier Rate Model To Evaluate Internal Quantum Efficiency And Analyze Efficiency Droop Origin Of Ingan Based Light-Emitting Diodes

Improvement of Radiative Recombination Rate and Efficiency Droop of InGaN Light Emitting Diodes with In‐Component‐Graded InGaN Barrier

Advantages of InGaN–GaN–InGaN Delta Barriers for InGaN-Based Laser Diodes

The Influence of InGaN Interlayer on the Performance of InGaN/GaN Quantum-Well-Based LEDs at High Injections

Carrier Velocity Modulation by Asymmetrical Concave Quantum Barriers to Improve the Performance of AlGaN-Based Deep Ultraviolet Light Emitting Diodes

Efficiency and radiative recombination rate enhancement in GaN/AlGaN multi-quantum well-based electron blocking layer free UV-LED for improved luminescence

Controlled carrier mean free path for the enhanced efficiency of III-nitride deep-ultraviolet light-emitting diodes

On the Carrier Injection Efficiency and Thermal Property of InGaN/GaN Axial Nanowire Light Emitting Diodes

High-output power GaN-LED based on surface plasmon enhancement

Device Simulation on GaN‐LED Operating in Noncarrier Injection Mode for Performance Improvement by Enhancing the Tunneling Effect in Multiquantum Wells

Implementation of electron restriction layer in n-AlGaN toward balanced carrier distribution in deep ultraviolet light-emitting-diodes