Abstract:Lithography is a top-down technology to produce sub-micrometer feature sizes for the fundamental research and widespread applications. The conventional optical lithography has been developed to not only make the tiny electronic devices to form the basic circuits in today’s computer chips, but also fabricate micro/nano electromechanical systems (MEMS/NEMS). However, the conventional photolithographic techniques have now reached their ultimate spatial resolution because of both the light diffraction and the photoresist restrictions [1]. Alternative techniques for traditional photolithography have been proposed and developed to meet the requirements of a high spatial resolution of sub100 nm as well as the capability to fabricate an arbitrary structure and achieve mass production [1-10]. Research teams around the word have been investigating alternative techniques including extreme ultraviolet lithography, electron and ion beam lithography, Xray lithography and atom lithography. Each technique has its own advantages and disadvantages, and no one yet knows which one will be the method of choice for the next generation lithography (NGL). The arrays of microand nanostructures fabricated on silicon substrates have now attracted more attention for its interesting characteristics in applications such as photonics, electronics, optoelectronics and sensing [11-15]. The array properties can be tuned further by varying the geometry, the doping, the periodicity, and the size of the microand nanostructures [11,12]. These controllable and elaborate arrays are commonly fabricated by conventional optical lithography, X-ray lithography, electron-beam or ion-beam lithography [1,16-18]. Unfortunately, there are inherent limitations to pattern over large areas at nanoscale using these lithographical techniques due to the light diffraction, the long-range inter-particle interactions and the proximity effects. To overcome these limitations, it’s necessary to develop new alternative techniques with a shorter wavelength and a thinner resist for traditional optical lithography. Among the alternative techniques for traditional photolithography, atom lithography based on metastable atoms beam (MAB) and self-assembled monolayers (SAMs) has shown significant potential in fabricating arrays of microand nanostructures, which is a major goal in nanoscience and nanotechnology [10,19-29]. Metastable atom is one of the atom’s electron is

Towards Atomic-Scale Fabrication in Silicon

Direct atomic fabrication and dopant positioning in Si using electron beams with active real time image-based feedback

CMOS Platform for Atomic-Scale Device Fabrication

Atomic-scale Control of Tunnel Coupling

Towards Atomic and Close-to-atomic Scale Manufacturing

Fabrication Of Quantum Devices By Angstrom-Level Manipulation Of Nanoparticles With An Atomic Force Microscope

Atomic-scale manipulation and in situ characterization with scanning tunneling microscopy

Atomic-scale Manufacture of Metre-Sized Two-Dimensional Single Crystals by Interfacial Modulation

The Atomic Drill Bit: Precision Controlled Atomic Fabrication of 2D Materials

AFM Tip-Based Fabrication of Silicon Nanostructures with Reduced Subsurface Amorphous Layers

Atomically Precise Manufacturing of Silicon Electronics

Nanoscale Semiconductor Processes Using STM and AFM Lithographies. Fabrication of Nanometer-to-atomic-scale Structures Using STM and AFM.

Multi-scale alignment to buried atom-scale devices using Kelvin probe force microscopy

Atom Lithography: Fabricating Arrays of Silicon Microstructures Using Self-Assembled Monolayer Resist and Metastable Helium Beam

Nanostructure fabrication on silicon surfaces by atom transfer from a gold tip using an ultrahigh vacuum scanning tunneling microscope

Fabrication of Quantum Devices by Ångström-level Manipulation of Nanoparticles with an Atomic Force Microscope

Single-Atom Control of Arsenic Incorporation in Silicon for High-Yield Artificial Lattice Fabrication

Atomic Manufacturing of Advanced Nanomaterials

Nanoscale Electronics Based on Two-Dimensional Dopant Patterns in Silicon

Molecular Beam Epitaxy Growth of Quantum Devices

Fabricating Artificial Nanostructures with a Scanning Tunneling Microscope