Abstract:Contact resistance is one of the critical factors that impact the performance of tunnel‐oxide‐passivated‐contact (TOPCon) silicon solar cells. Therefore, optimizing the Ag/Al–Si contact is crucial for improving the efficiency of devices. In this work, the roles of Al and Ag in contact formation are deeply researched, and the dominant effect of Al on reducing contact resistance is determined. For N‐type tunnel‐oxide‐passivated‐contact silicon solar cells, optimal Ag/Al–Si contact interface is crucial to improve the efficiency. However, the specific roles of Ag and Al at the interface have not been clearly elucidated. Hence, this work delves into the sintering process of Ag/Al paste and examines the impact of the Ag/Al–Si interface structure on contact quality. By incorporating TeO2 into PbO‐based Ag/Al paste, the Ag/Al–Si interface structure can be modulated. It can be found that TeO2 accelerates the sintering of Ag powder and increases Ag colloids within glass layer, while it simultaneously impedes the diffusion of molten Al. It leads to a reduced Al content near the Ag/Al–Si interface and a shorter diffusion distance of Al into Si. Notably, it can be demonstrated that the diffusion of Al in Si layer is more effective to reduce the contact resistance than the precipitation of Ag colloids. Therefore, the PbO‐based Ag/Al paste, which favors Al diffusion, leads to solar cells with lower contact resistance and series resistance, higher fill factor, and superior photoelectric conversion efficiency. In brief, this work is significant for optimizing metallization of silicon solar cells and other semiconductor devices.

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