Abstract:Neuromorphic computing represents an innovative technology that can perform intelligent and energy-efficient computation, whereas construction of neuromorphic systems requires biorealistic synaptic elements with rich dynamics that can be tuned based on a robust mechanism. Here, an ionic-gating-modulated synaptic transistor based on layered crystals of transitional metal dichalcogenides and phosphorus trichalcogenides is demonstrated, which produce a diversity of short-term and long-term plasticity including excitatory postsynaptic current, paired pulse facilitation, spiking-rate-dependent plasticity, dynamic filtering, etc., with remarkable linearity and ultralow energy consumption of ≈30 fJ per spike. Detailed transmission electron microscopy characterization and ab initio calculation reveal two-stage ionic gating effects, namely, surface adsorption and internal intercalation in the channel medium, causing different poststimulation diffusive dynamics and thus accounting for the observed short-term and long-term plasticity, respectively. The synaptic activity can therefore be effectively manipulated by tailoring the ionic gating and consequent diffusion dynamics with varied thickness and structure of the van der Waals material as well as the number, duration, rate, and polarity of gate stimulations, making the present synaptic transistors intriguing candidates for low-power neuromorphic systems.

A Two-Terminal Electric-Double-Layer Synaptic Device With Short-Term Plasticity

Top-Gate Electric-Double-Layer IZO-Based Synaptic Transistors for Neuron Networks

Short-Term Plasticity and Synaptic Filtering Emulated in Electrolyte-Gated IGZO Transistors

Synaptic Plasticity Modulation and Coincidence Detection Emulated in Multi-Terminal Neuromorphic Transistors

Two-terminal Self-Rectifying Optoelectronic Synaptic Devices with Largest-Dynamic-range Updates

Long-Term Synaptic Plasticity Emulated in Modified Graphene Oxide Electrolyte Gated IZO-Based Thin-Film Transistors.

Organic synaptic devices based on ionic gel with reduced leakage current

Synaptic Plasticity and Classical Conditioning Mimicked in Single Indium-Tungsten-oxide Based Neuromorphic Transistor

Activity Dependent Synaptic Plasticity Mimicked on Indium-Tin-Oxide Electric-Double-Layer Transistor.

Laterally Coupled Synaptic Transistors Gated by Proton Conducting Sodium Alginate Films

Optically Stimulated Synaptic Devices Based on the Hybrid Structure of Silicon Nanomembrane and Perovskite.

Synaptic Computation Demonstrated in a Two-Synapse Network Based on Top-Gate Electric-Double-Layer Synaptic Transistors

Short-Term Synaptic Plasticity Regulation in Solution-Gated Indium-Gallium-Zinc-Oxide Electric-Double-Layer Transistors

An Epitaxial Synaptic Device Made by a Band-Offset BaTiO3/Sr2IrO4 Bilayer with High Endurance and Long Retention

Synaptic Metaplasticity Emulation in a Freestanding Oxide-Based Neuromorphic Transistor with Dual In-Plane Gates

Ion Gated Synaptic Transistors Based on 2D van der Waals Crystals with Tunable Diffusive Dynamics

Device Engineering of Dual Metal Gate-Based Artificial Synapse for Enhanced Plasticity Utilizing Al$_{\text{2}}$O$_{\text{3}}$-Based Ion Conducting Electrolyte

Oxide-Based Synaptic Transistors Gated by Sol-Gel Silica Electrolytes

Synaptic Behaviors Mimicked in Flexible Oxide-Based Transistors on Plastic Substrates

Dual Metal Split Gate-Based Emulated Synaptic Device With Redacted Plasticity Utilizing Nanogranular Al2O3 Based Ion Conducting Electrolyte

Laterally Coupled 2D MoS2 Synaptic Transistor with Ion Gating