Ultra-low Power Consumption and Favorable Reliability Mn-doped BiFeO3 Resistance-Switching Devices Via Tunable Oxygen Vacancy
Yuwei Zhao,Rui Su,Lele Cheng,Min Cheng,Weiming Cheng,Hao Tong,Huajun Sun,Junbing Yan,Xiangshui Miao
DOI: https://doi.org/10.1016/j.ceramint.2022.11.066
IF: 5.532
2023-01-01
Ceramics International
Abstract:Due to the instability of Fe valence and the existence of a large number of oxygen vacancies in BFO films, a large leakage current, and comparatively low resistance value usually appear in BFO-based devices and high operating voltage and power consumption are demanded to form regular oxygen vacancy conductive channels, which restricts the application of BFO in resistive memory and memristor devices. In this paper, a series of Pt/BiFe1-xMnxO3/TiN (BFMO, x = 0, 0.05, 0.1, 0.15, 0.2) devices with different Mn doping concentrations were prepared by magnetron sputtering and lithography, and the microstructure and electrical characteristics of BFMO-based devices were investigated. As the amount of Mn doping increases, the resistive switching properties including operating voltage, power consumption, cycle stability, and retention of BFMO device first improve and then degrade. Interestingly, with the increase of Mn doping concentrations, the ratio of Fe2+ to Fe3+ and oxygen vacancies to lattice oxygen in BFMO devices analyzed by X-ray photoelectron spectroscopy initially diminishes reaching the minimum and then rises. Notably, BiFe0 center dot 9Mn0 center dot 1O3 device presents low DC operating voltage of -0.7 V and 0.8 V, preferable endurance of 10(4) pulse cycles, and low power consumption of only 0.45 pJ in a single set process. The remarkable electrical performance in BFMO-based devices likely originated from the inhibition of initial oxygen vacancies caused by Mn doping with appropriate content.