Resistance-switching Properties of Bi-doped $$\hbox {srtio}_{3}$$ SrTiO 3 Films for Non-Volatile Memory Applications with Different Device Structures

Hua Wang,Wenbo Zhang,Jiwen Xu,Guobao Liu,Hang Xie,Ling Yang

DOI: https://doi.org/10.1007/s12034-018-1677-0

IF: 1.878

2018-01-01

Bulletin of Materials Science

Abstract:\(\hbox {SrTiO}_{3}\) and Bi-doped \(\hbox {SrTiO}_{3}\) films were fabricated with different device structures using the sol–gel method for non-volatile memory applications, and their resistance-switching behaviour, endurance and retention characteristics were investigated. \(\hbox {SrTiO}_{3}\) and \(\hbox {Sr}_{0.92}\hbox {Bi}_{0.08}\hbox {TiO}_{3}\) films grown on Si or Pt have the same phase structure, morphologies and grain size; however, the grain size of the \(\hbox {Sr}_{0.92}\hbox {Bi}_{0.08}\hbox {TiO}_{3}\) films grown on Si is slightly larger than those of the \(\hbox {SrTiO}_{3}\) films grown on Si and the \(\hbox {Sr}_{0.92}\hbox {Bi}_{0.08}\hbox {TiO}_{3}\) films grown on Pt. The \(\hbox {SrTiO}_{3}\) or \(\hbox {Sr}_{0.92}\hbox {Bi}_{0.08}\hbox {TiO}_{3}\) films grown on Si or Pt all exhibit bipolar resistive-switching behaviour and follow the same conductive mechanism; however, the \(\hbox {Ag}/\hbox {Sr}_{0.92}\hbox {Bi}_{0.08}\hbox {TiO}_{3}/\hbox {Si}\) device possesses the highest \(R_{\mathrm{HRS}}{/}R_{\mathrm{LRS}}\) of \(10^{5}\) and the best endurance and retention characteristics. The doping of Bi is conducive to enhance the \(R_{\mathrm{HRS}}{/}R_{\mathrm{LRS}}\) of the \(\hbox {SrTiO}_{3}\) films; meanwhile, the Si substrates help improve the endurance and retention characteristics of the \(\hbox {Sr}_{0.92}\hbox {Bi}_{0.08}\hbox {TiO}_{3}\) films.