Organic–Inorganic Heterojunctions Toward High‐Performance Ambipolar Field‐Effect Transistor Applications

Molin Li,Jiawei Wang,Xiaoyong Cai,Fengjing Liu,Xiaojun Li,Liang Wang,Lei Liao,Chao Jiang
DOI: https://doi.org/10.1002/aelm.201800211
IF: 6.2
2018-01-01
Advanced Electronic Materials
Abstract:This work reports on combination of organic-inorganic heterojunctions between amorphous indium-gallium-zinc oxide (a-IGZO) and organic semiconductors for design of high-performance ambipolar transistors. A vertically sequential layer device configuration that the organic small molecule dinaphtho-thieno-thiophene (DNTT) and dioctylbenzothieno[2,3-b]benzothiophene (C8-BTBT) are directly vacuum deposited on the surface of a-IGZO without any interface modification is employed in ambipolar transistors. The ambipolar transistors based on C8-BTBT/a-IGZO featured with V-shaped transfer curves exhibit an outstanding electrical performance with mobilities as high as 5.1 and 4.5 cm(2) V-1 s(-1) for electrons and holes, respectively. The formation of N-type channel even if covered with several tens of nanometers thick small molecule film is clarified with the charge injection mechanisms based on both thermionic injection and/or tunneling transport processes. High-performance ambipolar inverter with extremely large gain of 124 V/V is fabricated based on the C8-BTBT/a-IGZO ambipolar transistors. Moreover, a single-transistor frequency doubler shows high spectral purity with 70% of the output energy at the doubling frequency of 2 kHz. The present work provides a strategy for manufacturing high-performance ambipolar transistor with straightforward processing approaches, which may help deepen the understanding of ambipolar channel's working mechanisms and optimize the design procedures of logic electrical components.
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