Ambipolar, High Performance, Acene-Based Organic Thin Film Transistors.

Ming L. Tang,Anna D. Reichardt,Nobuyuki Miyaki,Randall M. Stoltenberg,Zhenan Bao
DOI: https://doi.org/10.1021/ja8005918
IF: 15
2008-01-01
Journal of the American Chemical Society
Abstract:We present a high performance, ambipolar organic field-effect transistor composed of a single material. Ambipolar molecules are rare, and they can enable low-power complementary-like circuits. This low band gap, asymmetric linear acene contains electron-withdrawing fluorine atoms, which lower the molecular orbital energies, allowing the injection of electrons. While hole and electron mobilities of up to 0.071 and 0.37 cm2/V.s, respectively, are reported on devices measured in nitrogen, hole mobilities of up to 0.12 cm2/V.s were found in ambient, with electron transport quenched. These devices were fabricated on octadecyltrimethoxysilane-treated surfaces at a substrate temperature of 60 degrees C.
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