Abstract:Gallium nitride (GaN) power device is well known as a favorable alternative of silicon power device for the power management system. However, it is difficult to meet the demand of higher operating frequency when using the traditional high-voltage gate driver IC (HVIC) to control the GaN devices. In this article, we illustrated that the propagation delay of the high-voltage level-shifter structure is the primary factor in limiting the operating frequency of the HVIC, and a new high-voltage level-shifter structure named common-mode dual-interlock (CMDI) level-shifter structure is proposed, which can eliminate both the common-mode transient noise and differential-mode transient noise effectively without adopting resistance–capacitance noise filter. A better tradeoff between the dVS/dt noise immunity capability and the propagation delay can be achieved, which is verified by the numerous theoretical analysis and experimental results. Due to all, the GaN integration technology is not suitable for complicated circuits at present, a 600 V HVIC for GaN device adopting the proposed CMDI level-shifter structure is implemented with normal silicon-based bipolar-CMOS– double-diffused MOSFET (DMOS) technology finally. The experimental results show that it can achieve high dVS/dt noise immunity larger than 100 V/ns, low propagation delay less than 32 ns, and the allowable negative VS swing to –4 V at 5 V supply voltage.

A 600V High-side Gate Drive Circuit with Ultra-low Propagation Delay for Enhancement Mode GaN Devices

A Tri-Slope Gate Driving GaN DC–DC Converter with Spurious Noise Compression and Ringing Suppression for Automotive Applications

A GaN HEMTs Half-Bridge Driver with Bandgap Reference Comparator Clamping for High-Frequency DC-DC Converter.

A 2–10 MHz GaN HEMTs Half-Bridge Driver with Bandgap Reference Comparator Clamping and Dual Level Shifters for Automotive Applications

Study and Implementation of 600-V High-Voltage Gate Driver IC With the Common-Mode Dual-Interlock Technique for GaN Devices

A 400-V Half Bridge Gate Driver for Normally-off GaN HEMTs with Effective dv/dt Control and High dv/dt Immunity

A High-Speed Low Side GaN E-Hemt Driver with Gate Ringing and Overshoot Suppression.

Gate drive design considerations for high voltage cascode GaN HEMT

Monolithic GaN-Based Driver and GaN Switch With Diode-Emulated GaN Technique for 50-MHz Operation and Sub-0.2-ns Deadtime Control

Monolithic Integration of Gate Driver and Protection Modules with P-GaN Gate Power HEMTs

Advanced Active Gate Drive for Switching Performance Improvement and Overvoltage Protection of High-Power IGBTs

An Active Gate Driver for Dynamic Current Sharing of Paralleled SiC MOSFETs

A 20mhz 4A Gate Driver with 5.5 to 24V Output Drive Voltage for Wide Bandgap FETs.

Integration of Lpcvd-Sinx Gate Dielectric with Recessed-Gate E-Mode Gan Mis-Fets: Toward High Performance, High Stability and Long Tddb Lifetime

A 1200-V GaN/SiC cascode device with E-mode p-GaN gate HEMT and D-mode SiC junction field-effect transistor

A Monolithic GaN Power Stage with Common-Mode Transient Immunity and Negative Voltage Operation Design for High Frequency Power Converters

Characterization of Static and Dynamic Behavior of 1200 V Normally off GaN/SiC Cascode Devices

Gate Driver Design for SiC Power MOSFETs with a Low-Voltage GaN HEMT for Switching Loss Reduction and Gate Protection

Evaluation and applications of 600V/650V enhancement-mode GaN devices

Enhancement-Mode HEMT Performance and Mitigating Delay Through Double-Heterojunction With Connect Channel Utilization for Trap Effect Reduction

Design Techniques of Sub-ns Level Shifters With Ultrahigh dV/dt Immunity for Various Wide-Bandgap Applications