Abstract: The interactions between electrons and lattice vibrational modes play the key role in determining the carrier transport properties, thermoelectric performance and other physical quantities related to phonons in semiconductors. However, for two-dimensional (2D) materials, the widely-used models for carrier transport only consider the interactions between electrons and some specific phonon modes, which usually leads to inaccruate predictions of electrons/phonons transport properties. In this work, comprehensive investigations on full electron-phonon couplings and their influences on carrier mobility and thermoelectric performances of 2D group-IV and V elemental monolayers were performed, and we also analyzed in details the selection rules on electron-phonon couplings using group-theory arguments. Our calculations revealed that, for the cases of shallow dopings where only intravalley scatterings are allowed, the contributions from optical phonon modes are significantly larger than those from acoustic phonon modes in group-IV elemental monolayers, and LA and some specific optical phonon modes contribute significantly to the total intravalley scatterings. When the doping increases and intervalley scatterings are allowed, the intervalley scatterings are much stronger than intravalley scatterings, and ZA/TA/LO phonon modes dominate the intervalley scatterings in monolayer Si, Ge and Sn. The dominant contributions to the total intervalley scatterings are ZA/TO in monolayer P, ZA/TO in monolayer As and TO/LO in monolayer Sb. Based on the thorough investigations on the full electron-phonon couplings, we predict accurately the carrier mobilities and thermoelectric figure of merits in these two elemental crystals, and reveal significant reductions when compared with the calculations based on the widely-used simplified model.

First-principle High-Throughput Calculations of Carrier Effective Masses of Two-Dimensional Transition Metal Dichalcogenides

Deriving 2d M2x3 (M = Mo, W, X = S, Se) By Periodic Assembly Of Chalcogen Vacancy Lines In Their Mx2 Counterparts

Towards Accurate Predictions of Carrier Mobilities and Thermoelectric Performances in 2D Materials

Electronic, optical and transport properties of van der Waals Transition-metal Dichalcogenides Heterostructures: A First-principle Study

Tunable electronic properties of two-dimensional transition metal dichalcogenide alloys: A first-principles prediction

The mechanical, electronic and optical properties of two-dimensional transition metal chalcogenides MX2 and M2X3 (M = Ni, Pd; X = S, Se, Te) with hexagonal and orthorhombic structures

Point Defect Limited Carrier Mobility in 2D Transition Metal Dichalcogenides

First-Principles Calculations of Angular and Strain Dependence on Effective Masses of Two-Dimensional Phosphorene Analogues (Monolayer α-Phase Group-IV Monochalcogenides MX)

The role of Anderson's rule in determining electronic, optical and transport properties of transition metal dichalcogenide heterostructures.

Carrier mobilities of Janus transition metal dichalcogenides monolayers studied by Born effective charge and first-principles calculation

Electronic Structure, mass fluctuation, and Localized Bond Properties of two-dimensional double-layer transition metal chalcogenide MX$_2$ (M = Mo, W; X = S, Se, Te) Calculated Based on Density Functional Theory and BBC model

Computational Search for Two-Dimensional MX2 Semiconductors with Possible High Electron Mobility at Room Temperature

Electron Transport and Device Physics in Monolayer Transition-Metal Dichalcogenides

A Comparative First Principles Study of Two-Dimensional Transition Metal Dichalcogenides

A systematic investigation of thermal conductivities of transition metal dichalcogenides

Prediction of high carrier mobility for novel Janus Mo8S6Se6 monolayers with different phases: first principles calculations

High‐Throughput Computational Characterization of 2D Compositionally Complex Transition‐Metal Chalcogenide Alloys

Electronic structures and theoretical modelling of two-dimensional group-VIB transition metal dichalcogenides

First-principles Study of Carrier Mobility in MX (M=Sn, Pb; X=P, As) Monolayers

Charge transport and mobility engineering in two-dimensional transition metal chalcogenide semiconductors

Intrinsic Thermal Conductivities of Monolayer Transition Metal Dichalcogenides MX2 (M = Mo, W; X = S, Se, Te)