Abstract:One of the most critical issues for Ge/III-V MOSFETs, which have been regarded as a promising CMOS structure under sub 10 nm regime, is gate insulator formation satisfying the requirements of MOS interface quality and thin equivalent oxide thickness (EOT). In this paper, we focus on viable gate stack technologies realizing these requirements. As for Ge gate stacks, we present a ultrathin EOT Al2O3/GeOx/Ge gate stack fabricated by a plasma post oxidation method and pMOSFETs using this gate stack. The GeOx/Ge MOS interface properties are systemically examined, and the relations of the interface state density (D-it) with the GeOx thickness and the chemical conditions are studied. (100) Ge pMOSFETs using this gate stack is demonstrated with EOT down to 0.98 nm and high hole peak mobility of 401 cm(2)/Vs. As for InGaAs gate stacks, we show the impact of Al2O3 inter-layers on interface properties of HfO2/InGaAs MOS interfaces. It is found that the insertion of 0.2-nm-thick ultrathin Al2O3 inter-layer can effectively improve the HfO2/InGaAs interface properties such as the frequency dispersion and the stretch-out of C-V characteristics and Dit. The 1-nm-thick capacitance equivalent thickness (CET) in the HfO2/Al2O3/InGaAs MOS capacitors is realized with good interface properties and low gate leakage of 2.4x10(-2) A/cm(2).

Quantitative Characterization of Fast-Trap Behaviors in Al 2 O 3 /GeO x /Ge pMOSFETs

Fast-Trap Characterization In Ge Cmos Using Sub-1 Ns Ultra-Fast Measurement System

Quantitative Evaluation of Slow Traps Near Ge Mos Interfaces by Using Time Response of Mos Capacitance

Performance Comparison Between Si and Ge pDG-FETs for Different Channel Lengths Based on Hole Transport Simulation

Electrical Properties of Ge Pmosfets with Ultrathin EOT HfO2/AlOx/GeOx Gate-Stacks and NiGe Metal Source/Drain

On-The-Fly Interface Trap Measurement And Its Impact On The Understanding Of Nbti Mechanism For P-Mosfets With Sion Gate Dielectric

Ultra-Fast Oxide Traps in Sub-20-nm DRAM Technology: from Characterization to Physical Origin Identification

Traps Around Ge Schottky Junction Interface: Quantitative Characterization and Impact on the Electrical Properties of Ge MOS Devices

Aggressive EOT Scaling of Ge Pmosfets with HfO 2 /alo X /geo X Gate-Stacks Fabricated by Ozone Postoxidation

Physical mechanism determining Ge p- and n-MOSFETs mobility in high Ns region and mobility improvement by atomically flat GeOx/Ge interfaces

High-Mobility Ge Pmosfet with 1-Nm EOT $\hbox{al}_{2} \hbox{o}_{3}/\hbox{geo}_{x}/\hbox{ge}$ Gate Stack Fabricated by Plasma Post Oxidation

Trap Characterization of Trench-Gate SiC MOSFETs Based on Transient Drain Current

A Fast Extraction Method of Energy Distribution of Border Traps in AlGaN/GaN MIS-HEMT

Impact of Channel Orientation on Electrical Properties of Ge P- and N-Mosfets with 1-Nm Eot Al2o3/Geox/Ge Gate-Stacks Fabricated by Plasma Postoxidation

Characterization of Electron Traps in Si-Capped Ge MOSFETs with $\hbox{hfo}_{2}/\hbox{sio}_{2}$ Gate Stack

Al2o3/Geox/Ge Gate Stacks with Low Interface Trap Density Fabricated by Electron Cyclotron Resonance Plasma Postoxidation

Demonstration of Ultra-Thin Buried Oxide Germanium-on-insulator MOSFETs by Direct Wafer Bonding and Polishing Techniques

1-Nm-thick EOT High Mobility Ge N- and P-Mosfets with Ultrathin GeOx/Ge MOS Interfaces Fabricated by Plasma Post Oxidation

MOS interface control of high mobility channel materials for realizing ultrathin EOT gate stacks

Impact of Interface Traps on Switching Behavior of Normally‐off AlGaN/GaN MOS‐HEMTs

High-Mobility Ge P- and N-Mosfets with 0.7-Nm EOT Using $\hbox{hfo}_{2}/\hbox{al}_{2}\hbox{o}_{3}/\hbox{geo}_{x}/\hbox{ge}$ Gate Stacks Fabricated by Plasma Postoxidation