Abstract:Cost-effective mid-wave infrared (MWIR) optoelectronic devices are of utmost importance to a plethora of applications such as night vision, thermal sensing, autonomous vehicles, free-space communication, and spectroscopy. To this end, leveraging the ubiquitous silicon-based processing has emerged as a powerful strategy that can be accomplished through the use of group IV germanium-tin (GeSn) alloys. Indeed, due to their compatibility with silicon and their tunable bandgap energy covering the entire MWIR range, GeSn semiconductors are frontrunner platforms for compact and scalable MWIR technologies. However, the GeSn large lattice parameter has been a major hurdle limiting the quality of GeSn epitaxy on silicon wafers. Herein, it is shown that sub-20 nm Ge nanowires (NWs) provide effective compliant substrates to grow Ge$_{1-x}$Sn$_{x}$ alloys with a composition uniformity over several micrometers with a very limited build-up of the compressive strain. Ge/Ge$_{1-x}$Sn$_{x}$ core/shell NWs with Sn content spanning the 6 to 18 at.$\%$ range are demonstrated and integrated in photoconductive devices exhibiting a high signal-to-noise ratio at room temperature and a tunable cutoff wavelength covering the 2.0 $\mu$m to 3.9 $\mu$m range. Additionally, the processed NW-based detectors were used in uncooled imagers enabling the acquisition of high-quality images under both broadband and laser illuminations without a lock-in technique.

Systematic Study of Ge0.89Sn0.11 Photodiodes for Low-Cost Shortwave Infrared Imaging

Study of High Performance GeSn Photodetectors with Cutoff Wavelength Up to 3.7 Μm for Low-Cost Infrared Imaging

Si-based GeSn photodetectors towards mid-infrared imaging applications

Ultrafast visible-infrared photodetector based on the SnSe<sub>2</sub>/Bi<sub>2</sub>Se<sub>3</sub> heterostructure

Ge0.9sn0.1 P-I-N Photodiode With Record-High Responsivity At Two-Micron-Wavelength

Investigation of Si-based Ge0.89Sn0.11 Photoconductors with 3.0 Μm Photoresponse

Room-temperature extended short-wave infrared GeSn photodetectors realized by ion beam techniques

Ge0.975Sn0.025 320 × 256 imager chip for 1.6-1.9 μm infrared vision

Comprehensive Investigation of GeSn Metasurface Photodetector for Short-Wave Infrared Application

Photo Detection and Modulation from 1,550 to 2,000 Nm Realized by a GeSn/Ge Multiple-Quantum-well Photodiode on a 300-Mm Si Substrate

GeSn 320 \times 256 Focal Plane Array for Silicon-Based Short-wave Infrared Imaging

Metal-Semiconductor-Metal GeSn Photodetectors on Silicon for Short-Wave Infrared Applications

Self-power, Multiwavelength Photodetector Based on Sn-doped Ge Quantum Dots / Hexagonal Silicon Nanowires Heterostructures

High-Bandwidth Extended-SWIR GeSn Photodetectors on Silicon Achieving Ultrafast Broadband Spectroscopic Response

Optical System Design for a Shortwave Infrared Imaging Spectrometer

Low dark current lateral Ge PIN photodetector array with resonant cavity effect for short wave infrared imaging

Mid-Infrared Detectors and Imagers Integrating All-Group IV Nanowires

Ge-based Triple-Band Infrared Photodetector

Development of Monolithic Germanium–Tin on Si Avalanche Photodiodes for Infrared Detection

Low-temperature performance of GeSn-on-Si avalanche photodiodes toward single-photon detection

A Route toward High-Detectivity and Low-Cost Short-Wave Infrared Photodetection: GeSn/Ge Multiple-Quantum-Well Photodetectors with a Dielectric Nanohole Array Metasurface