A New Low-Loss Microwave Dielectric Ceramic GaNbO 4

Han Yang,Shuren Zhang,Zhe Xiong,Zixuan Fang,Bin Tang
DOI: https://doi.org/10.1016/j.jallcom.2018.05.151
IF: 6.2
2018-01-01
Journal of Alloys and Compounds
Abstract:In this study, the preparation, phase constitution, microstructure and dielectric properties of GaNbO4 ceramics were investigated. Prepared via traditional solid-state reaction method at 1000-1080 degrees C, the GaNbO4 ceramics existed as a composite of two allomorphic GaNbO4 phases: alpha-GaNbO4 (monoclinic, space group P2/c, Z=2) and beta-GaNbO4 (monoclinic, space group C2, Z= 4). The contents of alpha and beta GaNbO4 phases changed with the change of sintering temperature. The GaNbO4 ceramics showed a microstructure with closely packed grains in two different sizes and shapes. The GaNbO4 sintered at 1060 degrees C exhibited typical values of epsilon(r) = 15.8, Q x f=101,000 GHz and tau(f)=-63.4 ppm/degrees C. (C) 2018 Elsevier B.V. All rights reserved.
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