Ge-doped Li3+xMg2Nb1-xGexO6 ceramics with enhanced low loss and high temperature stability properties

Haokai Su,Jie Li,Gang Wang,Feng Gao,Yan Yang,Yahui Sun,Xuening Han,Zheng Liang,Qiang Li
DOI: https://doi.org/10.1016/j.ceramint.2021.05.018
IF: 5.532
2021-08-01
Ceramics International
Abstract:<p>New high-performance materials have attracted much attention due to ever-increasing demands for advanced communication technologies. In present work, Ge-doped Li<sub>3+x</sub>Mg<sub>2</sub>Nb<sub>1-x</sub>Ge<sub>x</sub>O<sub>6</sub> (0 ≤ x ≤ 0.08) ceramics are prepared via solid-state reaction route. Microstructural analysis and crystal structure refinement reveal that moderate substitution can promote grain growth and modify crystal structure, thus enhancing microwave dielectric properties of composites. In that sense, special attention is paid to the behavior of dielectric constant <em>ε</em><sub><em>r</em></sub>, quality factor <em>Q×f</em>, and frequency temperature coefficient <em>τ</em><sub><em>f</em></sub> of final products. In these systems, <em>ε</em><sub><em>r</em></sub> parameter depends on the density, miscellaneous phases, and polarizability; <em>Q×f</em> value is shown to be influenced by Nb-O bond energy, grain size, and bulk density; finally, <em>τ</em><sub><em>f</em></sub> characteristic refers to Nb-O bond valence and NbO<sub>6</sub> octahedral distortion. Among above ceramics, Li<sub>3.02</sub>Mg<sub>2</sub>Nb<sub>0.98</sub>Ge<sub>0.02</sub>O<sub>6</sub> composite sintered at 1250 °C exhibits outstanding microwave absorption performance with <em>ε</em><sub><em>r</em></sub> = 15.32, <em>Q×f</em> = 969 88 GHz, and <em>τ</em><sub><em>f</em></sub> = −8.25 ppm/°C.</p>
materials science, ceramics
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