Abstract:BN/Si3 N4 composite ceramics were fabricated with reaction sintering method using silicon powder and boron powder as raw materials.Phases were analyzed using the X-ray diffraction (XRD).Chemical structures were identified using Fourier transform infrared (FT-IR) spectrometer.Microstructural formations were characterized using scanning electron microscopy (SEM),and dielectric properties were measured at room temperature with coaxial method.The experimental results showed that the nitridation degrees of the specimens were hindered by increasing forming pressure,but obviously increased as the heating temperature rose.The nitridation degrees of the specimens firstly increased and then decreased with the amounts of boron increasing.Composite ceramic with 10％ boron addition under 12 MPa cold forming pressure,which was nitrided at 1450 ℃ exhibited high phase forming ofβ-Si3 N4 ,with porosity of 40.12％.At the frequency ranging from 2 GHz to 18 GHz,the dielectric constant and the dielectric loss tan-gent were 3.27 to 3.58 and 1.10×10 -3 to 1.12×10 -2 ,respectively.The dielectric properties of ceramics were improved due to the boron addition,which could be used as a kind of transparent material in microwaves.

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