Abstract:The recombination and spin dynamics of excitons in colloidal CdTe nanocrystals (NCs) are studied by timeresolved photoluminescence in high magnetic fields up to 15 T and at cryogenic temperatures. The recombination decay shows a nonexponential temporal behavior, with the longest component corresponding to the dark excitons having 260-ns decay time at zeromagnetic field and 4.2-K temperature. This long component shortens to 150 ns at 15 T due to themagnetic-field-induced mixing of the bright-and dark-exciton states. The spin dynamics, assessed through the evolution of the magnetic-field-induced circular polarization degree of the photoluminescence, has a fast component shorter than 1 ns related to the bright excitons and a slow component of 5-10 ns associated with the dark excitons. The latter shortens with increasing magnetic field, which is characteristic for a phonon-assisted spin-relaxation mechanism. The relatively low saturation level of the associated magnetic-field-induced circular polarization degree of -30% is explained by a model that suggests the CdTe NCs to constitute an ensemble of prolate and oblate NCs, both having a structural quantization axis. The exciton g factor of 2.4-2.9 evaluated from fitting the experimental data in the frame of the suggested approach is in good agreement with the expected value for the dark excitons in CdTe NCs.

Dynamics of Low Temperature Excitons in Fe-doped GaN

Exciton Spin Dynamics of Colloidal Cdte Nanocrystals in Magnetic Fields

High Magnetic Field Studies Of Charged Exciton Localization In Gaas/Alxga1-Xas Quantum Wells

Temperature Dependent Photon Emission Spectra of Free Excitons in Phonon Field of GaN

Highly enhanced exciton recombination rate by strong electron-phonon coupling in single ZnTe nanobelt.

Fano Resonance in the Luminescence Spectra of Donor Bound Excitons in Polar Semiconductors

Observation of strong-coupling effects in a diluted magnetic semiconductor (Ga,Fe)N

Photoinduced Spin Precession in Fe/GaAs(001) Heterostructure with Low Power Excitation

Localized Exciton Dynamics in AlInGaN Alloy

Band-edge optical transitions in a nonpolar-plane GaN substrate: exciton–phonon coupling and temperature effects

Room-Temperature Bound Exciton with Long Lifetime in Monolayer GaN

Exciton Localization and Delocalization in GaNAs/GaAs Quantum Wells

Temperature Dependence of the Lo Phonon Sidebands in Free Exciton Emission of Gan

Effect of Temperature on Longitudinal Optical Phonon-Assisted Exciton Luminescence in Heteroepitaxial GaN Layer

Optical Properties and Exciton Localization in Ganas/Gaas

Determination of the electron-capture coefficients and the concentration of free electrons in GaN from time-resolved photoluminescence

Luminescence Signature of Free Exciton Dissociation and Liberated Electron Transfer Across the Junction of Graphene/gan Hybrid Structure

Spin Relaxation Induced by Interfacial Effects in GaN/Al0.25Ga0.75N Heterostructures

Direct determination of free exciton binding energy from phonon-assisted luminescence spectra in GaN epilayers

High Energy Pseudogap and Its Evolution with Doping in Fe-Based Superconductors As Revealed by Optical Spectroscopy

Time-Resolved Exciton Luminescence In Gan Grown By Metalorganic Chemical-Vapor-Deposition