Abstract:Submitted for the MAR11 Meeting of The American Physical Society Towards Quantum Spin Hall Effect in InAs/GaSb Quantum Wells IVAN KNEZ, RUI-RUI DU, Rice University, GERRARD SULLIVAN, Teledyne Scientific Co. — Recently, it has been proposed that inverted InAs/GaSb composite quantum wells (CQWs) should exhibit the Quantum Spin Hall Effect (QSHE), characterized by the energy gap in the bulk and gapless edge modes which are protected from backscattering by time reversal symmetry. We have successfully fabricated a double-gated device on high-quality MBE-grown InAs/GaAs CQWs in the inverted regime, in which we were able to vary the band structure via an electrical field, and tune the Fermi level into mini-gap regime. We observed clear evidence for an energy gap in the inverted regime, with values of the gap consistent with those theoretically predicted; however, the mini-gap exhibits residual conductivity of non-trivial origin, which complicates transport investigation of proposed edge channels. We note that the InAs surface states around the sample edges may play a role in the observed resistivity features. In ongoing work, we pursue Cooper pair injection experiments by proximity to an s-wave superconductor, which should provide a novel probe of the proposed helical edge modes. We will discuss our progress towards observing QSHE in this unique material system. The work at Rice was supported by grants from NSF, Keck Foundation, and Hackerman Advanced Research Program. Ivan Knez Rice University Date submitted: 12 Nov 2010 Electronic form version 1.4

Microwave Photocurrent from the Edge States of InAs/GaInSb Bilayers

Probing the Semiconductor to Semimetal Transition in InAs/GaSb Double Quantum Wells by Magneto-Infrared Spectroscopy

Towards Quantum Spin Hall Effect in InAs/GaSb Quantum Wells

Microwave spectroscopy of Andreev states in InAs nanowire-based hybrid junctions using a flip-chip layout

Quantum Spin Hall Effect in Inverted InAs/GaSb Quantum Wells

Multi-probe analysis to separate edge currents from bulk currents in quantum spin Hall insulators and to analyze their temperature dependence

Perfect Andreev Reflection of Helical Edge Modes in InAs/GaSb Quantum Wells

Observation of the Photoinduced Anomalous Hall Effect in Gan-Based Heterostructures

Robust Helical Edge Transport in GatedInAs/GaSbBilayers

Low-Temperature Conductivity of Weakly Interacting Quantum Spin Hall Edges in Strained-Layer InAs/GaInSb

Probing the Dark-Exciton States of a Single Quantum Dot Using Photocurrent Spectroscopy in a Magnetic Field

Real-space imaging of quantum Hall effect edge strips

Imaging the Conductance of Integer and Fractional Quantum Hall Edge States

Observation Of Edge Transport In The Disordered Regime Of Topologically Insulating Inas/Gasb Quantum Wells

Images Of Edge Current In Inas/Gasb Quantum Wells

Transport in InAs/GaSb Quantum Spin Hall Insulators with High-K Dielectrics As the Top Barrier

Edge Transport in the Trivial Phase of Inas/Gasb

Andreev reflection of helical edge modes in InAs/GaSb quantum spin Hall insulator.

Andreev reflection of quantum Hall states through a quantum point contact

Quadratic Magnetic Field Dependence of Magnetoelectric Photocurrent

Determination of the current-phase relation of an InAs 2DEG Josephson junction with a microwave resonator