Observation of Tunneling Gap in Epitaxial Ultrathin Films of Pyrite-Type Copper Disulfide

Chong Liu,Haohao Yang,Can-Li Song,Wei Li,Ke He,Xu-Cun Ma,Lili Wang,Qi-Kun Xue
DOI: https://doi.org/10.1088/0256-307x/35/2/027303
2018-01-01
Abstract:We report scanning tunneling microscopy investigation on epitaxial ultrathin films of pyrite-type copper disulfide. Layer-by-layer growth of CuS2 films with a preferential orientation of (111) on SrTiO3(001) and Bi2Sr2CaCu2O8+delta substrates is achieved by molecular beam epitaxy growth. For ultrathin films on both kinds of substrates, we observe symmetric tunneling gap around the Fermi level that persists up to similar to 15 K. The tunneling gap degrades with either increasing temperature or increasing thickness, suggesting new matter states at the extreme two-dimensional limit.
What problem does this paper attempt to address?