Abstract:Layered metal chalcogenide materials provide a versatile platform to investigate emergent phenomena and two-dimensional (2D) superconductivity at/near the atomically thin limit. In particular, gate-induced interfacial superconductivity realized by the use of an electric-double-layer transistor (EDLT) has greatly extended the capability to electrically induce superconductivity in oxides, nitrides, and transition metal chalcogenides and enable one to explore new physics, such as the Ising pairing mechanism. Exploiting gate-induced superconductivity in various materials can provide us with additional platforms to understand emergent interfacial superconductivity. Here, we report the discovery of gate-induced 2D superconductivity in layered 1T-SnSe2, a typical member of the main-group metal dichalcogenide (MDC) family, using an EDLT gating geometry. A superconducting transition temperature Tc ≈ 3.9 K was demonstrated at the EDL interface. The 2D nature of the superconductivity therein was further confirmed based on (1) a 2D Tinkham description of the angle-dependent upper critical field Bc2, (2) the existence of a quantum creep state as well as a large ratio of the coherence length to the thickness of superconductivity. Interestingly, the in-plane Bc2 approaching zero temperature was found to be 2-3 times higher than the Pauli limit, which might be related to an electric field-modulated spin-orbit interaction. Such results provide a new perspective to expand the material matrix available for gate-induced 2D superconductivity and the fundamental understanding of interfacial superconductivity.

Observation of Interface Superconductivity in a SnSe2 /epitaxial Graphene Van Der Waals Heterostructure

Interface Structure of A Topological Insulator/Superconductor Heterostructure

Interface Enhanced Superconductivity in Monolayer FeSe Film on Oxide Substrate

Observation of pseudogap in SnSe2 atomic layers grown on graphite

Gate-Induced Interfacial Superconductivity in 1T-Snse2.

Ohmic contact in graphene/SnSe2 Van Der Waals heterostructures and its device performance from ab initio simulation

Interface superconductivity based on heteroepitaxial films

Two-dimensional Superconductivity at the Interface of a Bi2Te3/FeTe Heterostructure

Tuning the band structure and superconductivity in single-layer FeSe by interface engineering

Interface High-Temperature Superconductivity

Observation of Intervalley Quantum Interference in Epitaxial Monolayer Tungsten Diselenide.

Proximity-induced superconductivity in epitaxial topological insulator/graphene/gallium heterostructures

Interaction effects and superconductivity signatures in twisted double-bilayer WSe$_2$

Observation of interface induced high temperature superconductivity in single unit-cell FeSe films on SrTiO3(110)

Observation of Robust Zero-Energy State and Enhanced Superconducting Gap in a Trilayer Heterostructure of MnTe/Bi 2 Te 3 /fe(te, Se)

Observation of in-gap states in a two-dimensional CrI2/NbSe2 heterostructure

Scanning Tunneling Microscopy of Interface Properties of Bi2se3 on Fese

Superconductivity in Single-quintuple-layer Bi2Te3 Grown on Epitaxial FeTe.

Modulating the Electronic Properties of Graphene by Self-Organized Sulfur Identical Nanoclusters and Atomic Superlattices Confined at an Interface

Observation of robust zero-energy state and enhanced superconducting gap in a trilayer heterostructure of MnTe/Bi <sub>2</sub> Te <sub>3</sub> /Fe(Te, Se)

Atomic Heteroepitaxy for Topological Superconductivity