Abstract:Organic additives used in Cu electroplating for IC interconnects have been studied extensively due to their pivotal roles in the void-free filling of recessed features. The suppressive additives are typically polymers or co-polymers with variable molecular weight (MW). The properties of these additives, as well as their interaction with accelerator, vary with the monomer type and the MW. As the additives are typically treated as indivisible molecules in the analysis of the filling mechanism, these variations are typically quantified by the difference in some coefficients that characterize the additive behaviors, such as adsorption / desorption rates and suppression strength. As an example, polyethylene glycol (PEG) with a larger MW would have a higher adsorption rate and exhibit stronger suppression effect than PEG with a smaller MW. However, since these large molecules consist of multiple identical building blocks from the polymerization of one or more monomer species, the behavior of the molecule as a whole depends on the number and type of the monomers. In order to understand such an intrinsic dependency and the resulting differences in additive properties, stochastic modeling was applied in the study of suppressor additive and its interaction with accelerator [1]. Using PEG and SPS as the model chemicals, a stochastic model was developed to simulate the transient processes in Cu electroplating, e.g. cyclic voltammogram (CV) under various conditions. Simulations were performed for both suppressor-only cases and suppressor-accelerator interactions. The dependency of PEG adsorption / desorption and PEG-SPS interaction on various factors, including bath composition, scan rate and molecular weight, was simulated and compared with the corresponding experimental measurements. An overall good qualitative match was shown in the comparisons. Figure 1 shows simulated CVs under two very different conditions. At higher SPS/Cl - concentrations, case (a) demonstrates the PEG-SPS interaction, which has been known to be important for the super-conformal filling of trenches [2, 3]. At lower SPS / Cl - concentrations, case (b) demonstrates the critical desorption behavior of PEG as a suppressor, which has been shown to be important for the fast bottom-up type filling of high aspect ratio TSVs in damascene copper plating [4]. Since the proposed model provides a unified approach to simulate both the suppress-accelerator interaction and the critical desorption behavior of suppressors, it enables the development of general-purpose multi-scale simulation programs for the filling of various recessed features within a wide length-scale range covering both the Damascene interconnects and TSVs. References [1] L. Yang, A. Radisic, J. Deconinck, P. Vereecken, Journal of the Electrochemical Society, 161, D269(2014) [2] A. C. West, S. Mayer, J. Reid, Electrochemical and Solid-State Letters, 4, C50(2001) [3] T. P. Moffat, D. Wheeler, W. H. Huber, D. Josell, Electrochemical and Solid-State Letters, 4, C26(2001) [4] L. Yang, A. Radisic, J. Deconinck, P. Vereecken, Journal of the Electrochemical Society, 160, D3051(2013) Figure 1

Tetraoxa-Diphosphaspiro Derivative As Suppressor For Microvia Filling By Copper Electroplating In Acidic Solution

Synergistic Effect of Different Additives on Microvia Filling in an Acidic Copper Plating Solution

Electrochemical Analysis of Cathode in TSV Copper Electroplating

Potential-Dependence Of Additives Distribution In Copper Electrodeposition Via Filling

Electrochemical and analytical study of electroplating additive in copper plating solution for microvia filling

Studies of polixetonium chloride as a novel, hypotoxic and single additive of copper electronic plating for microvia void-free filling in printed circuit board application

Evaluating the Via Filling Performance with Thin Surface Cu by the Synergistic Effect of Different Additives

Observation of the Behavior of Additives in Copper Electroplating Using a Microfluidic Device

Copper Fill of Microvia Using a Thiol-Modified Cu Seed Layer and Various Levelers

Investigations of the electrochemical performance and filling effects of additives on electroplating process of TSV

1-(4-Hydroxyphenyl)-2H-tetrazole-5-thione as a leveler for acid copper electroplating of microvia

Evaluating Copper Plating Process for Filling Micro Vias with Thin Surface Cu by the 1-(4-carboxyphenyl)-5-mercapto-1h-tetrazole Additive

Competitive Adsorption Between Suppressor and Accelerator in Copper Methanesulfonic Acid Bath for Electrodeposition

Influence of Convection-Dependent Adsorption of Additives on Microvia Filling by Copper Electroplating

Novel Suppressor for Damascene Copper Electrodeposition: Thioether-Modified Polyether with Enhanced Adsorption Through an Adjustable Synthesis Strategy

Investigation of competitive adsorption between accelerator and suppressor in TSV copper electroplating

Through silicon via filling by copper electroplating in acidic cupric methanesulfonate bath

On the role of halides and thiols in additive-assisted copper electroplating

Structural Effect of Inhibitors on Adsorption and Desorption Behaviors During Copper Electroplating for Through-Silicon Vias

Stochastic Modeling of Organic Additives in Cu Electroplating

Electrochemical behaviors of additives in high Cu(II) concentration solution for high-aspect-ratio through ceramic holes filling